Inventor
LEE DAI-YING
TW33 patents
⚠️ This page may combine multiple inventors who share the name “LEE DAI-YING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MACRONIX INT CO LTD
32 patentsUS9484353B1Nov 1, 2016
Memory device and method for fabricating the same
MACRONIX INT CO LTD27 citations94
US9455403B1Sep 27, 2016
Semiconductor structure and method for manufacturing the same
MACRONIX INT CO LTD22 citations92
US10157963B1Dec 18, 2018
Semiconductor device with memory structure
MACRONIX INT CO LTD8 citations84
US11871588B2Jan 9, 2024
Memory device and method for manufacturing the same
MACRONIX INT CO LTD3 citations75
US9627397B2Apr 18, 2017
Memory device and method for fabricating the same
MACRONIX INT CO LTD4 citations73
US9583700B2Feb 28, 2017
RRAM process with roughness tuning technology
MACRONIX INT CO LTD6 citations73
US12260917B2Mar 25, 2025
Storage device for generating identity code and identity code generating method
MACRONIX INT CO LTD0 citations62
US12114514B2Oct 8, 2024
Method for manufacturing memory device
MACRONIX INT CO LTD0 citations62
US12046286B1Jul 23, 2024
Programmable logic computation in memory
MACRONIX INT CO LTD0 citations62
US11984166B2May 14, 2024
Storage device for generating identity code and identity code generating method
MACRONIX INT CO LTD0 citations62
US11776873B2Oct 3, 2023
Semiconductor structure and manufacturing method for the same
MACRONIX INT CO LTD0 citations62
US11302605B2Apr 12, 2022
Semiconductor structure comprising via element and manufacturing method for the same
MACRONIX INT CO LTD0 citations62
US10490744B2Nov 26, 2019
Contact hole structure method for fabricating the same and applications thereof
MACRONIX INT CO LTD1 citations62
US9306160B2Apr 5, 2016
Memory device having oxygen control layers and manufacturing method of same
MACRONIX INT CO LTD2 citations62
US12255136B2Mar 18, 2025
Semiconductor structure and method for manufacturing having the conductive portions isolated from each other by an insulating 2D material
MACRONIX INT CO LTD0 citations61
US11955416B2Apr 9, 2024
Semiconductor structure and method for manufacturing the same
MACRONIX INT CO LTD0 citations61
US11482282B2Oct 25, 2022
Memory device and operation method thereof
MACRONIX INT CO LTD1 citations61
US12500143B2Dec 16, 2025
Bonding structure, semiconductor chip and fabricating method thereof
MACRONIX INT CO LTD0 citations60
US12254915B1Mar 18, 2025
Integrated circuit structure and method for forming and operating the same
MACRONIX INT CO LTD0 citations56
US12406882B2Sep 2, 2025
Semiconductor element and method for manufacturing the same
MACRONIX INT CO LTD0 citations52
US10763306B2Sep 1, 2020
Resistive memory and method for fabricating the same and applications thereof
MACRONIX INT CO LTD0 citations52
US10388698B2Aug 20, 2019
Resistive memory with bird beak shaped structure method for fabricating the same and applications thereof
MACRONIX INT CO LTD0 citations52
US10158068B1Dec 18, 2018
Resistive random access memory device and method for manufacturing the same
MACRONIX INT CO LTD1 citations52
US9997567B1Jun 12, 2018
Semiconductors structure having an RRAM structure and method for forming the same
MACRONIX INT CO LTD0 citations52
US9711217B1Jul 18, 2017
Memory device and operating method for resistive memory cell
MACRONIX INT CO LTD1 citations52
US9583536B2Feb 28, 2017
Memory device and method for manufacturing the same
MACRONIX INT CO LTD1 citations52
US9276090B2Mar 1, 2016
Self-rectified device, method for manufacturing the same, and applications of the same
MACRONIX INT CO LTD0 citations52
US12094564B2Sep 17, 2024
Memory device and computing method thereof
MACRONIX INT CO LTD0 citations51
US10720426B2Jul 21, 2020
Three dimensional memory device and method for fabricating the same
MACRONIX INT CO LTD0 citations51
US10170467B2Jan 1, 2019
Three dimensional memory device and method for fabricating the same
MACRONIX INT CO LTD0 citations51
US11853890B2Dec 26, 2023
Memory device and operation method thereof
MACRONIX INT CO LTD0 citations50
US10811602B2Oct 20, 2020
Tungsten oxide RRAM with barrier free structure
MACRONIX INT CO LTD0 citations42