Inventor
KWON TAE YONG
KR20 patents
⚠️ This page may combine multiple inventors who share the name “KWON TAE YONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
14 patentsUS9412816B2Aug 9, 2016
Semiconductor device including multiple nanowire transistor
SAMSUNG ELECTRONICS CO LTD25 citations94
US10566245B2Feb 18, 2020
Method of fabricating gate all around semiconductor device
SAMSUNG ELECTRONICS CO LTD11 citations85
US7318879B2Jan 15, 2008
Apparatus to manufacture semiconductor
SAMSUNG ELECTRONICS CO LTD18 citations84
US10164057B1Dec 25, 2018
Vertical tunneling field effect transistor and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations83
US10014300B2Jul 3, 2018
Integrated circuit devices having inter-device isolation regions and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations71
US9576955B2Feb 21, 2017
Semiconductor device having strained channel layer and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations71
US11282835B2Mar 22, 2022
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations70
US10892347B2Jan 12, 2021
Vertical tunneling field effect transistor and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US10804391B2Oct 13, 2020
Vertical field-effect transistor (VFET) devices and methods of forming the same
SAMSUNG ELECTRONICS CO LTD1 citations61
US11670636B2Jun 6, 2023
Method for fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations59
US9236435B2Jan 12, 2016
Tunneling field effect transistor
SAMSUNG ELECTRONICS CO LTD2 citations59
US10411129B2Sep 10, 2019
Methods of fabricating semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations52
US9893186B2Feb 13, 2018
Methods of fabricating semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations52
US9394262B2Jul 19, 2016
Method of separating carbon nanotubes
SAMSUNG ELECTRONICS CO LTD0 citations45