Inventor
MIYAWAKI MAMORU
JP139 patents
⚠️ This page may combine multiple inventors who share the name “MIYAWAKI MAMORU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CANON KK
49 patentsUS5815223ASep 29, 1998
Display device having a silicon substrate, a locos film formed on the substrate, a tensile stress film formed on the locos film, and TFTs formed on the tensile stress film
CANON KK203 citations99
US5612230AMar 18, 1997
Process for manufacturing a semiconductor device by applying a non-single-crystalline material on a sidewall inside of an opening portion for growing a single-crystalline semiconductor body
CANON KK135 citations99
US5412240AMay 2, 1995
Silicon-on-insulator CMOS device and a liquid crystal display with controlled base insulator thickness
CANON KK150 citations99
US4904895AFeb 27, 1990
Electron emission device
CANON KK317 citations99
US6683657B1Jan 27, 2004
Projection display device and application system of same
CANON KK119 citations98
US6407442B2Jun 18, 2002
Semiconductor device, and operating device, signal converter, and signal processing system using the same semiconductor device
CANON KK139 citations98
US6127998AOct 3, 2000
Matrix substrate, liquid-crystal device incorporating the matrix substrate, and display device incorporating the liquid-crystal device
CANON KK96 citations98
US6051851AApr 18, 2000
Semiconductor devices utilizing silicide reaction
CANON KK122 citations98
US5926238AJul 20, 1999
Image display device, semiconductor device and optical element
CANON KK100 citations98
US5926057AJul 20, 1999
Semiconductor device, circuit having the device, and correlation calculation apparatus, signal converter, and signal processing system utilizing the circuit
CANON KK107 citations98
US5835045ANov 10, 1998
Semiconductor device, and operating device, signal converter, and signal processing system using the semiconductor device.
CANON KK133 citations98
US5773355AJun 30, 1998
Method for manufacturing semiconductor substrate
CANON KK94 citations98
US5708486AJan 13, 1998
LCD having a shading layer exhibiting a different reflection characteristic from reflection electrodes
CANON KK111 citations98
US5530266AJun 25, 1996
Liquid crystal image display unit and method for fabricating semiconductor optical member
CANON KK116 citations98
US5317433AMay 31, 1994
Image display device with a transistor on one side of insulating layer and liquid crystal on the other side
CANON KK241 citations98
US5801373ASep 1, 1998
Solid-state image pickup device having a plurality of photoelectric conversion elements on a common substrate
CANON KK133 citations97
US5691794ANov 25, 1997
Liquid crystal display device
CANON KK121 citations97
US5453611ASep 26, 1995
Solid-state image pickup device with a plurality of photoelectric conversion elements on a common semiconductor chip
CANON KK152 citations97
US6522360B1Feb 18, 2003
Image pickup apparatus performing autofocus processing and image enlargement in a common selected image plane region
CANON KK59 citations96
US6515640B2Feb 4, 2003
Electron emission device with gap between electron emission electrode and substrate
CANON KK55 citations96
US6324101B1Nov 27, 2001
Storage method involving change of resistance state
CANON KK67 citations96
US6166792ADec 26, 2000
Reflective LCD having reflectivity characteristics between electrodes and reflector
CANON KK65 citations96
US6163352ADec 19, 2000
Active matrix substrated, liquid crystal apparatus using the same the display apparatus using such liquid crystal apparatus
CANON KK67 citations96
US6096582AAug 1, 2000
Method of making a semiconductor device
CANON KK76 citations96
US6078368AJun 20, 2000
Active matrix substrate, liquid crystal apparatus using the same and display apparatus using such liquid crystal apparatus
CANON KK41 citations96
US6057897AMay 2, 2000
Active matrix display in which adjacent transistors share a common source region
CANON KK72 citations96
US5999237ADec 7, 1999
Liquid crystal display device including a toric prism lens having an aspheric mirror mounted on a polarizing means
CANON KK52 citations96
US5994757ANov 30, 1999
Electronic circuit device capable for use as a memory device
CANON KK55 citations96
US5952694ASep 14, 1999
Semiconductor device made using processing from both sides of a workpiece
CANON KK53 citations96
US5886365AMar 23, 1999
Liquid crystal display device having a capacitator in the peripheral driving circuit
CANON KK86 citations96
US5873003AFeb 16, 1999
Sight line detector, display unit, view finder and unit and camera with the same display unit
CANON KK81 citations96
US5827755AOct 27, 1998
Liquid crystal image display unit and method for fabricating semiconductor optical member
CANON KK89 citations96
US5808336ASep 15, 1998
Storage device
CANON KK72 citations96
US5786658AJul 28, 1998
Electron emission device with gap between electron emission electrode and substrate
CANON KK44 citations96
US5757054AMay 26, 1998
Display unit
CANON KK54 citations96
US5644370AJul 1, 1997
Liquid crystal display apparatus with a plural layer connection between the TFT drains and the pixel electrodes
CANON KK59 citations96
US5633182AMay 27, 1997
Method of manufacturing an image display device with reduced cell gap variation
CANON KK68 citations96
US5598037AJan 28, 1997
Semiconductor device with a contact member made of semiconductor material having a columnar structure
CANON KK35 citations96
US5579027ANov 26, 1996
Method of driving image display apparatus
CANON KK97 citations96
US5543648AAug 6, 1996
Semiconductor member and semiconductor device having a substrate with a hydrogenated surface
CANON KK53 citations96
US5513028AApr 30, 1996
Liquid crystal display with display area having same height as peripheral portion thereof
CANON KK72 citations96
US5466961ANov 14, 1995
Semiconductor device and method of manufacturing the same
CANON KK88 citations96
US5439843AAug 8, 1995
Method for preparing a semiconductor substrate using porous silicon
CANON KK77 citations96
US5428237AJun 27, 1995
Semiconductor device having an insulated gate transistor
CANON KK91 citations96
US5374329ADec 20, 1994
Process for producing a semiconductor wafer
CANON KK69 citations96
US4962412AOct 9, 1990
Photoelectric conversion apparatus without isolation regions
CANON KK104 citations96
US7148906B2Dec 12, 2006
Image display device and method for displaying an image on the basis of a plurality of image signals
CANON KK35 citations93
US6980243B2Dec 27, 2005
Photoelectric conversion device providing advantageous readout of two-dimensional array of transistors
CANON KK20 citations93
US6828986B2Dec 7, 2004
Image display device and method for displaying an image on the basis of a plurality of image signals
CANON KK31 citations93
CANON KABUSHI KAISHA
1 patentShowing the top 50 of 139 patents by PatentIndex Score.