P

Inventor

MIYAWAKI MAMORU

JP139 patents
⚠️ This page may combine multiple inventors who share the name “MIYAWAKI MAMORU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CANON KK

49 patents
US5815223ASep 29, 1998

Display device having a silicon substrate, a locos film formed on the substrate, a tensile stress film formed on the locos film, and TFTs formed on the tensile stress film

CANON KK203 citations99
US5612230AMar 18, 1997

Process for manufacturing a semiconductor device by applying a non-single-crystalline material on a sidewall inside of an opening portion for growing a single-crystalline semiconductor body

CANON KK135 citations99
US5412240AMay 2, 1995

Silicon-on-insulator CMOS device and a liquid crystal display with controlled base insulator thickness

CANON KK150 citations99
US4904895AFeb 27, 1990

Electron emission device

CANON KK317 citations99
US6683657B1Jan 27, 2004

Projection display device and application system of same

CANON KK119 citations98
US6407442B2Jun 18, 2002

Semiconductor device, and operating device, signal converter, and signal processing system using the same semiconductor device

CANON KK139 citations98
US6127998AOct 3, 2000

Matrix substrate, liquid-crystal device incorporating the matrix substrate, and display device incorporating the liquid-crystal device

CANON KK96 citations98
US6051851AApr 18, 2000

Semiconductor devices utilizing silicide reaction

CANON KK122 citations98
US5926238AJul 20, 1999

Image display device, semiconductor device and optical element

CANON KK100 citations98
US5926057AJul 20, 1999

Semiconductor device, circuit having the device, and correlation calculation apparatus, signal converter, and signal processing system utilizing the circuit

CANON KK107 citations98
US5835045ANov 10, 1998

Semiconductor device, and operating device, signal converter, and signal processing system using the semiconductor device.

CANON KK133 citations98
US5773355AJun 30, 1998

Method for manufacturing semiconductor substrate

CANON KK94 citations98
US5708486AJan 13, 1998

LCD having a shading layer exhibiting a different reflection characteristic from reflection electrodes

CANON KK111 citations98
US5530266AJun 25, 1996

Liquid crystal image display unit and method for fabricating semiconductor optical member

CANON KK116 citations98
US5317433AMay 31, 1994

Image display device with a transistor on one side of insulating layer and liquid crystal on the other side

CANON KK241 citations98
US5801373ASep 1, 1998

Solid-state image pickup device having a plurality of photoelectric conversion elements on a common substrate

CANON KK133 citations97
US5691794ANov 25, 1997

Liquid crystal display device

CANON KK121 citations97
US5453611ASep 26, 1995

Solid-state image pickup device with a plurality of photoelectric conversion elements on a common semiconductor chip

CANON KK152 citations97
US6522360B1Feb 18, 2003

Image pickup apparatus performing autofocus processing and image enlargement in a common selected image plane region

CANON KK59 citations96
US6515640B2Feb 4, 2003

Electron emission device with gap between electron emission electrode and substrate

CANON KK55 citations96
US6324101B1Nov 27, 2001

Storage method involving change of resistance state

CANON KK67 citations96
US6166792ADec 26, 2000

Reflective LCD having reflectivity characteristics between electrodes and reflector

CANON KK65 citations96
US6163352ADec 19, 2000

Active matrix substrated, liquid crystal apparatus using the same the display apparatus using such liquid crystal apparatus

CANON KK67 citations96
US6096582AAug 1, 2000

Method of making a semiconductor device

CANON KK76 citations96
US6078368AJun 20, 2000

Active matrix substrate, liquid crystal apparatus using the same and display apparatus using such liquid crystal apparatus

CANON KK41 citations96
US6057897AMay 2, 2000

Active matrix display in which adjacent transistors share a common source region

CANON KK72 citations96
US5999237ADec 7, 1999

Liquid crystal display device including a toric prism lens having an aspheric mirror mounted on a polarizing means

CANON KK52 citations96
US5994757ANov 30, 1999

Electronic circuit device capable for use as a memory device

CANON KK55 citations96
US5952694ASep 14, 1999

Semiconductor device made using processing from both sides of a workpiece

CANON KK53 citations96
US5886365AMar 23, 1999

Liquid crystal display device having a capacitator in the peripheral driving circuit

CANON KK86 citations96
US5873003AFeb 16, 1999

Sight line detector, display unit, view finder and unit and camera with the same display unit

CANON KK81 citations96
US5827755AOct 27, 1998

Liquid crystal image display unit and method for fabricating semiconductor optical member

CANON KK89 citations96
US5808336ASep 15, 1998

Storage device

CANON KK72 citations96
US5786658AJul 28, 1998

Electron emission device with gap between electron emission electrode and substrate

CANON KK44 citations96
US5757054AMay 26, 1998

Display unit

CANON KK54 citations96
US5644370AJul 1, 1997

Liquid crystal display apparatus with a plural layer connection between the TFT drains and the pixel electrodes

CANON KK59 citations96
US5633182AMay 27, 1997

Method of manufacturing an image display device with reduced cell gap variation

CANON KK68 citations96
US5598037AJan 28, 1997

Semiconductor device with a contact member made of semiconductor material having a columnar structure

CANON KK35 citations96
US5579027ANov 26, 1996

Method of driving image display apparatus

CANON KK97 citations96
US5543648AAug 6, 1996

Semiconductor member and semiconductor device having a substrate with a hydrogenated surface

CANON KK53 citations96
US5513028AApr 30, 1996

Liquid crystal display with display area having same height as peripheral portion thereof

CANON KK72 citations96
US5466961ANov 14, 1995

Semiconductor device and method of manufacturing the same

CANON KK88 citations96
US5439843AAug 8, 1995

Method for preparing a semiconductor substrate using porous silicon

CANON KK77 citations96
US5428237AJun 27, 1995

Semiconductor device having an insulated gate transistor

CANON KK91 citations96
US5374329ADec 20, 1994

Process for producing a semiconductor wafer

CANON KK69 citations96
US4962412AOct 9, 1990

Photoelectric conversion apparatus without isolation regions

CANON KK104 citations96
US7148906B2Dec 12, 2006

Image display device and method for displaying an image on the basis of a plurality of image signals

CANON KK35 citations93
US6980243B2Dec 27, 2005

Photoelectric conversion device providing advantageous readout of two-dimensional array of transistors

CANON KK20 citations93
US6828986B2Dec 7, 2004

Image display device and method for displaying an image on the basis of a plurality of image signals

CANON KK31 citations93

CANON KABUSHI KAISHA

1 patent

Showing the top 50 of 139 patents by PatentIndex Score.