Inventor
YANG PO-WEN
US9 patents
⚠️ This page may combine multiple inventors who share the name “YANG PO-WEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR CO LTD
4 patentsUS9799742B1Oct 24, 2017
Field effect transistor having electrode coated sequentially by oxide layer and nitride layer and method for manufacturing the same
TAIWAN SEMICONDUCTOR CO LTD2 citations68
US9741825B1Aug 22, 2017
Method for manufacturing field effect transistor having widened trench
TAIWAN SEMICONDUCTOR CO LTD2 citations68
US9960244B2May 1, 2018
Field effect transistor having electrode coated sequentially by oxide layer and nitride layer and method for manufacturing the same
TAIWAN SEMICONDUCTOR CO LTD0 citations47
US9905690B1Feb 27, 2018
Field effect transistor having a multi-width electrode structure and method for manufacturing the same
TAIWAN SEMICONDUCTOR CO LTD1 citations47
TAIWAN SEMICONDUCTOR MFG CO LTD
3 patentsUS11390520B2Jul 19, 2022
Systems and methods for uniform target erosion magnetic assemblies
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US11557470B2Jan 17, 2023
Sputtering target assembly to prevent overetch of backing plate and methods of using the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations55
US11424111B2Aug 23, 2022
Sputtering target assembly to prevent overetch of backing plate and methods of using the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations55