P

Inventor

WANG JHONG-SHENG

TW25 patents
⚠️ This page may combine multiple inventors who share the name “WANG JHONG-SHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

24 patents
US11165012B2Nov 2, 2021

Magnetic device and magnetic random access memory

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10032869B2Jul 24, 2018

Fin field effect transistor (FinFET) device having position-dependent heat generation and method of making the same

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9373712B2Jun 21, 2016

Transistor and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US11672185B2Jun 6, 2023

Magnetic device and magnetic random access memory

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11616124B2Mar 28, 2023

Method of making fin field effect transistor (FinFET) device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11289538B2Mar 29, 2022

Memory device and semiconductor die, and method of fabricating memory device

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11238911B2Feb 1, 2022

Method for writing to magnetic random access memory

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10916286B2Feb 9, 2021

Assisted write method for MRAM testing and field applications

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US10685693B2Jun 16, 2020

Method for writing to magnetic random access memory

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12382841B2Aug 5, 2025

Magnetic device and magnetic random access memory

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12300293B2May 13, 2025

Method for writing to magnetic random access memory

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12302587B2May 13, 2025

Memory device and semiconductor die, and method of fabricating memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12046638B2Jul 23, 2024

Fin field effect transistor (FinFET) device having position-dependent heat generation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12035636B2Jul 9, 2024

Magnetic device and magnetic random access memory

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11825664B2Nov 21, 2023

Memory device and semiconductor die, and method of fabricating memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11727974B2Aug 15, 2023

Method for writing to magnetic random access memory

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11244714B2Feb 8, 2022

Assisted write method for magnetic random access memory

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11107889B2Aug 31, 2021

Fin field effect transistor (FinFET) device having position-dependent heat generation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11631796B2Apr 18, 2023

Integrated thermoelectric devices in Fin FET technology

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11424399B2Aug 23, 2022

Integrated thermoelectric devices in Fin FET technology

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US9691894B2Jun 27, 2017

Transistor having gate, first metal-containing material and second metal-containing material with different work functions

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10510410B2Dec 17, 2019

Method for programming resistive memory cell with AC perturbation AC signal and nonvolatile memory device thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9977072B2May 22, 2018

Semiconductor structure and method for operating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48
US10553494B2Feb 4, 2020

Breakdown resistant semiconductor apparatus and method of making same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations39

TAIWAN SEMICONDUCTOR MFG

1 patent