Inventor
WANG JHONG-SHENG
TW25 patents
⚠️ This page may combine multiple inventors who share the name “WANG JHONG-SHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
24 patentsUS11165012B2Nov 2, 2021
Magnetic device and magnetic random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10032869B2Jul 24, 2018
Fin field effect transistor (FinFET) device having position-dependent heat generation and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9373712B2Jun 21, 2016
Transistor and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US11672185B2Jun 6, 2023
Magnetic device and magnetic random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11616124B2Mar 28, 2023
Method of making fin field effect transistor (FinFET) device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11289538B2Mar 29, 2022
Memory device and semiconductor die, and method of fabricating memory device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11238911B2Feb 1, 2022
Method for writing to magnetic random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10916286B2Feb 9, 2021
Assisted write method for MRAM testing and field applications
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US10685693B2Jun 16, 2020
Method for writing to magnetic random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12382841B2Aug 5, 2025
Magnetic device and magnetic random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12300293B2May 13, 2025
Method for writing to magnetic random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12302587B2May 13, 2025
Memory device and semiconductor die, and method of fabricating memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12046638B2Jul 23, 2024
Fin field effect transistor (FinFET) device having position-dependent heat generation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12035636B2Jul 9, 2024
Magnetic device and magnetic random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11825664B2Nov 21, 2023
Memory device and semiconductor die, and method of fabricating memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11727974B2Aug 15, 2023
Method for writing to magnetic random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11244714B2Feb 8, 2022
Assisted write method for magnetic random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11107889B2Aug 31, 2021
Fin field effect transistor (FinFET) device having position-dependent heat generation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11631796B2Apr 18, 2023
Integrated thermoelectric devices in Fin FET technology
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11424399B2Aug 23, 2022
Integrated thermoelectric devices in Fin FET technology
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US9691894B2Jun 27, 2017
Transistor having gate, first metal-containing material and second metal-containing material with different work functions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10510410B2Dec 17, 2019
Method for programming resistive memory cell with AC perturbation AC signal and nonvolatile memory device thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9977072B2May 22, 2018
Semiconductor structure and method for operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48
US10553494B2Feb 4, 2020
Breakdown resistant semiconductor apparatus and method of making same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations39