P

Inventor

KOMATSU SHIGERU

JP52 patents
⚠️ This page may combine multiple inventors who share the name “KOMATSU SHIGERU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOKYO SHIBAURA ELECTRIC CO

17 patents
US4236832ADec 2, 1980

Strain insensitive integrated circuit resistor pair

TOKYO SHIBAURA ELECTRIC CO99 citations95
US4438556AMar 27, 1984

Method of forming doped polycrystalline silicon pattern by selective implantation and plasma etching of undoped regions

TOKYO SHIBAURA ELECTRIC CO42 citations93
US4298883ANov 3, 1981

Plastic material package semiconductor device having a mechanically stable mounting unit for a semiconductor pellet

TOKYO SHIBAURA ELECTRIC CO44 citations91
US4467312AAug 21, 1984

Semiconductor resistor device

TOKYO SHIBAURA ELECTRIC CO23 citations82
US4279671AJul 21, 1981

Method for manufacturing a semiconductor device utilizing dopant predeposition and polycrystalline deposition

TOKYO SHIBAURA ELECTRIC CO24 citations82
US4888306ADec 19, 1989

Method of manufacturing a bipolar transistor

TOKYO SHIBAURA ELECTRIC CO9 citations74
US4732872AMar 22, 1988

Method for making a bipolar transistor and capacitors using doped polycrystalline silicon or metal silicide

TOKYO SHIBAURA ELECTRIC CO17 citations74
US4589936AMay 20, 1986

Method for fabricating a semiconductor device by co-diffusion of arsenic and phosphorus

TOKYO SHIBAURA ELECTRIC CO11 citations74
US4577397AMar 25, 1986

Method for manufacturing a semiconductor device having vertical and lateral transistors

TOKYO SHIBAURA ELECTRIC CO12 citations74
US4516147AMay 7, 1985

Semiconductor device having a substrate covered with a high impurity concentration first polycrystalline layer and then a lower impurity concentration second polycrystalline layer

TOKYO SHIBAURA ELECTRIC CO12 citations74
US4423434ADec 27, 1983

Semiconductor device having two or more semiconductor elements with paired characteristics regularly arranged in a semiconductor substrate

TOKYO SHIBAURA ELECTRIC CO9 citations74
US4224088ASep 23, 1980

Method for manufacturing a semiconductor device

TOKYO SHIBAURA ELECTRIC CO7 citations74
US4210689AJul 1, 1980

Method of producing semiconductor devices

TOKYO SHIBAURA ELECTRIC CO11 citations74
US4261765AApr 14, 1981

Method of manufacturing a semiconductor device

TOKYO SHIBAURA ELECTRIC CO10 citations73
US4484212ANov 20, 1984

Semiconductor device

TOKYO SHIBAURA ELECTRIC CO17 citations72
US4451844AMay 29, 1984

Polysilicon emitter and base contacts separated by lightly doped poly separator

TOKYO SHIBAURA ELECTRIC CO6 citations63
US4272304AJun 9, 1981

Method of manufacturing a semiconductor device

TOKYO SHIBAURA ELECTRIC CO5 citations63

HITACHI LTD

16 patents

TOSHIBA KK

7 patents

KUBOTA KK

4 patents

KOMATSU SHIGERU

2 patents

NIPPON CATALYTIC CHEM IND

2 patents

MIURA DENSHI KK

1 patent

ASANO GEAR CO LTD

1 patent

Showing the top 50 of 52 patents by PatentIndex Score.