Inventor
LIANG PIN-JU
TW14 patents
Patents
14 patentsUS11916105B2Feb 27, 2024
Semiconductor device with corner isolation protection and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations74
US10741674B2Aug 11, 2020
Selective silicon growth for gapfill improvement
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10535751B2Jan 14, 2020
Selective silicon growth for gapfill improvement
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10504747B2Dec 10, 2019
Method of gap filling using conformal deposition-annealing-etching cycle for reducing seam void and bending
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12317550B2May 27, 2025
Methods of forming a semiconductor device with corner isolation protection
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12191212B2Jan 7, 2025
Semiconductor method and device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11107903B2Aug 31, 2021
Selective silicon growth for gapfill improvement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10347741B1Jul 9, 2019
Gapfill improvement
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12183590B2Dec 31, 2024
Method of performing gap filling including filling trenches between dummy gate stacks on semiconductor fins/strips with semiconductor material
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11677015B2Jun 13, 2023
Method of manufacturing a semiconductor device and a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11605543B2Mar 14, 2023
Method of gap filling using conformal deposition-annealing-etching cycle for reducing seam void and bending
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11289343B2Mar 29, 2022
Method of gap filling using conformal deposition-annealing-etching cycle for reducing seam void and bending
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11087987B2Aug 10, 2021
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11232988B2Jan 25, 2022
Wavy profile mitigation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50