Inventor
HASE NAOKI
JP30 patents
⚠️ This page may combine multiple inventors who share the name “HASE NAOKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
12 patentsUS9991314B2Jun 5, 2018
Magnetoresistive element and magnetic memory
TOSHIBA KK2 citations72
US9793469B2Oct 17, 2017
Magnetoresistive element and magnetic memory
TOSHIBA KK3 citations72
US9112140B2Aug 18, 2015
Magnetoresistive effect element with an oscillation layer
TOSHIBA KK2 citations63
US9013837B2Apr 21, 2015
Magnetoresistive element including a changing composition as distance increases away from an intermediate film, and magnetic head with the same
TOSHIBA KK3 citations63
US8970993B2Mar 3, 2015
Magnetoresistive magnetic head with magnetoresistive film including a metal layer and a Heusler alloy layer, and magnetic recording and reproducing apparatus
TOSHIBA KK2 citations63
US8953286B2Feb 10, 2015
Magnetoresistive element with aluminum or iron concentration ratio changed in film-thickness direction
TOSHIBA KK2 citations63
US8913351B2Dec 16, 2014
Magnetoresistance effect element, magnetic head, magnetic head assembly, and magnetic recording and reproducing device
TOSHIBA KK3 citations63
US10340442B2Jul 2, 2019
Magnetoresistive element and magnetic memory
TOSHIBA KK1 citations62
US10256394B2Apr 9, 2019
Magnetoresistive element and magnetic memory
TOSHIBA KK1 citations62
US8970986B2Mar 3, 2015
Magnetic head and magnetic head assembly having a spin torque oscillator
TOSHIBA KK0 citations52
US9859491B2Jan 2, 2018
Magnetoresistive element and magnetic memory
TOSHIBA KK1 citations51
US8879215B2Nov 4, 2014
Magnetoresistance effect element, magnetic head, magnetic head assembly, and magnetic recording and reproducing device
TOSHIBA KK0 citations42
SONY SEMICONDUCTOR SOLUTIONS CORP
7 patentsUS11069389B2Jul 20, 2021
Magnetic memory and magnetic memory recording method
SONY SEMICONDUCTOR SOLUTIONS CORP3 citations73
US10964366B2Mar 30, 2021
Magnetic memory, recording method of magnetic memory, and reading method of magnetic memory
SONY SEMICONDUCTOR SOLUTIONS CORP5 citations73
US11195989B2Dec 7, 2021
Ferromagnetic tunnel junction element and method of manufacturing the same
SONY SEMICONDUCTOR SOLUTIONS CORP0 citations63
US10964604B2Mar 30, 2021
Magnetic storage element, magnetic storage device, electronic device, and method of manufacturing magnetic storage element
SONY SEMICONDUCTOR SOLUTIONS CORP1 citations63
US10783932B2Sep 22, 2020
Magnetic memory, semiconductor device, electronic device, and method of reading magnetic memory
SONY SEMICONDUCTOR SOLUTIONS CORP1 citations63
US11551737B2Jan 10, 2023
Magnetic storage element and electronic apparatus
SONY SEMICONDUCTOR SOLUTIONS CORP0 citations52
US11462681B2Oct 4, 2022
Magnetic storage element, magnetic head, magnetic storage device, electronic apparatus, and method for manufacturing magnetic storage element
SONY SEMICONDUCTOR SOLUTIONS CORP0 citations52
SAMSUNG ELECTRONICS CO LTD
4 patentsUS11935677B2Mar 19, 2024
Magnetic device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12150387B2Nov 19, 2024
Magnetic tunneling junction device and memory device including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12052930B2Jul 30, 2024
Magnetic tunneling junction device and memory device including the same
SAMSUNG ELECTRONICS CO LTD1 citations61
US12080459B2Sep 3, 2024
Synthetic antiferromagnet, magnetic tunneling junction device including the synthetic antiferromagnet, and memory device including the magnetic tunneling junction device
SAMSUNG ELECTRONICS CO LTD0 citations50