Inventor
WEINRICH VOLKER
FR28 patents
⚠️ This page may combine multiple inventors who share the name “WEINRICH VOLKER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
24 patentsUS6708405B2Mar 23, 2004
Method for producing an electrically conducting connection
INFINEON TECHNOLOGIES AG56 citations95
US6258658B1Jul 10, 2001
Memory cell configuration and corresponding fabrication method
INFINEON TECHNOLOGIES AG26 citations91
US6586348B2Jul 1, 2003
Method for preventing etching-induced damage to a metal oxide film by patterning the film after a nucleation anneal but while still amorphous and then thermally annealing to crystallize
INFINEON TECHNOLOGIES AG18 citations84
US6454956B1Sep 24, 2002
Structuring method
INFINEON TECHNOLOGIES AG18 citations84
US6296777B1Oct 2, 2001
Structuring process
INFINEON TECHNOLOGIES AG17 citations84
US6734459B2May 11, 2004
Semiconductor memory cell
INFINEON TECHNOLOGIES AG7 citations74
US6315913B1Nov 13, 2001
Structuring method
INFINEON TECHNOLOGIES AG12 citations74
US6210595B1Apr 3, 2001
Method for producing structures having a high aspect ratio and structure having a high aspect ratio
INFINEON TECHNOLOGIES AG12 citations74
US6136659AOct 24, 2000
Production process for a capacitor electrode formed of a platinum metal
INFINEON TECHNOLOGIES AG12 citations74
US6737692B2May 18, 2004
Method for fabricating a component, and component having a metal layer and an insulation layer
INFINEON TECHNOLOGIES AG7 citations73
US6649424B2Nov 18, 2003
Method for fabricating an integrated semiconductor circuit having a strongly polarizable dielectric or ferroelectric
INFINEON TECHNOLOGIES AG10 citations71
US6790676B2Sep 14, 2004
Method for producing a ferroelectric layer
INFINEON TECHNOLOGIES AG7 citations69
US6730562B2May 4, 2004
Method of patterning ferroelectric layers
INFINEON TECHNOLOGIES AG4 citations63
US7045070B1May 16, 2006
Method of producing an electrode configuration and method of electrically contacting the electrode configuration
INFINEON TECHNOLOGIES AG4 citations62
US6852240B2Feb 8, 2005
Method of manufacturing a ferroelectric capacitor configuration
INFINEON TECHNOLOGIES AG3 citations62
US6495415B2Dec 17, 2002
Method for fabricating a patterned layer
INFINEON TECHNOLOGIES AG3 citations62
US6566220B2May 20, 2003
Method for fabricating a semiconductor memory component
INFINEON TECHNOLOGIES AG3 citations58
US6593228B2Jul 15, 2003
Method of fabricating a patterned metal-containing layer on a semiconductor wafer
INFINEON TECHNOLOGIES AG2 citations56
US6716643B1Apr 6, 2004
Method for producing a semiconductor memory element
INFINEON TECHNOLOGIES AG1 citations52
US6649483B2Nov 18, 2003
Method for fabricating a capacitor configuration
INFINEON TECHNOLOGIES AG0 citations52
US6537900B2Mar 25, 2003
Method for patterning a metal or metal silicide layer and a capacitor structure fabricated by the method
INFINEON TECHNOLOGIES AG0 citations52
US6613640B2Sep 2, 2003
Method for fabricating an integrated ferroelectric semiconductor memory and integrated ferroelectric semiconductor memory
INFINEON TECHNOLOGIES AG1 citations51
US6825116B2Nov 30, 2004
Method for removing structures
INFINEON TECHNOLOGIES AG0 citations49
US6818503B2Nov 16, 2004
Method for fabricating a semiconductor memory device
INFINEON TECHNOLOGIES AG0 citations41
SIEMENS AG
3 patentsUS6037256AMar 14, 2000
Method for producing a noble metal-containing structure on a substrate, and semiconductor component having such a noble metal-containing structure
SIEMENS AG15 citations73
US6004856ADec 21, 1999
Manufacturing process for a raised capacitor electrode
SIEMENS AG14 citations73
US6656376B1Dec 2, 2003
Process for cleaning CVD units
SIEMENS AG7 citations71