Inventor
SCHINDLER GUENTHER
DE42 patents
⚠️ This page may combine multiple inventors who share the name “SCHINDLER GUENTHER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
31 patentsUS6708405B2Mar 23, 2004
Method for producing an electrically conducting connection
INFINEON TECHNOLOGIES AG56 citations95
US6323513B1Nov 27, 2001
Semiconductor component having at least one capacitor and methods for fabricating it
INFINEON TECHNOLOGIES AG18 citations93
US7033926B2Apr 25, 2006
Strip conductor arrangement and method for producing a strip conductor arrangement
INFINEON TECHNOLOGIES AG24 citations92
US6438019B2Aug 20, 2002
Ferroelectric random access memory (FeRAM) having storage capacitors with different coercive voltages
INFINEON TECHNOLOGIES AG29 citations92
US7807563B2Oct 5, 2010
Method for manufacturing a layer arrangement and layer arrangement
INFINEON TECHNOLOGIES AG23 citations89
US6586348B2Jul 1, 2003
Method for preventing etching-induced damage to a metal oxide film by patterning the film after a nucleation anneal but while still amorphous and then thermally annealing to crystallize
INFINEON TECHNOLOGIES AG18 citations84
US6559003B2May 6, 2003
Method of producing a ferroelectric semiconductor memory
INFINEON TECHNOLOGIES AG16 citations83
US6888244B2May 3, 2005
Interconnect arrangement and method for fabricating an interconnect arrangement
INFINEON TECHNOLOGIES AG9 citations74
US6649468B2Nov 18, 2003
Method for fabricating a microelectronic component
INFINEON TECHNOLOGIES AG8 citations74
US6627496B1Sep 30, 2003
Process for producing structured layers, process for producing components of an integrated circuit, and process for producing a memory configuration
INFINEON TECHNOLOGIES AG11 citations74
US6197633B1Mar 6, 2001
Method for the production of an integrated semiconductor memory configuration
INFINEON TECHNOLOGIES AG10 citations74
US6168988B1Jan 2, 2001
Method for producing barrier-free semiconductor memory configurations
INFINEON TECHNOLOGIES AG7 citations74
US6136659AOct 24, 2000
Production process for a capacitor electrode formed of a platinum metal
INFINEON TECHNOLOGIES AG12 citations74
US6500677B2Dec 31, 2002
Method for fabricating a ferroelectric memory configuration
INFINEON TECHNOLOGIES AG13 citations72
US6649424B2Nov 18, 2003
Method for fabricating an integrated semiconductor circuit having a strongly polarizable dielectric or ferroelectric
INFINEON TECHNOLOGIES AG10 citations71
US6790676B2Sep 14, 2004
Method for producing a ferroelectric layer
INFINEON TECHNOLOGIES AG7 citations69
US6730562B2May 4, 2004
Method of patterning ferroelectric layers
INFINEON TECHNOLOGIES AG4 citations63
US6670662B1Dec 30, 2003
Semiconductor storage component with storage cells, logic areas and filling structures
INFINEON TECHNOLOGIES AG5 citations63
US6627934B1Sep 30, 2003
Integrated semiconductor memory configuration with a buried plate electrode and method for its fabrication
INFINEON TECHNOLOGIES AG4 citations63
US6316802B1Nov 13, 2001
Easy to manufacture integrated semiconductor memory configuration with platinum electrodes
INFINEON TECHNOLOGIES AG5 citations63
US7755160B2Jul 13, 2010
Plasma excited chemical vapor deposition method silicon/oxygen/nitrogen-containing-material and layered assembly
INFINEON TECHNOLOGIES AG4 citations62
US7276300B2Oct 2, 2007
Microelectronic structure having a hydrogen barrier layer
INFINEON TECHNOLOGIES AG2 citations62
US6852240B2Feb 8, 2005
Method of manufacturing a ferroelectric capacitor configuration
INFINEON TECHNOLOGIES AG3 citations62
US6515891B2Feb 4, 2003
Random access memory with hidden bits
INFINEON TECHNOLOGIES AG5 citations62
US6495415B2Dec 17, 2002
Method for fabricating a patterned layer
INFINEON TECHNOLOGIES AG3 citations62
US6455328B2Sep 24, 2002
Method of manufacture of a capacitor with a dielectric on the basis of strontium-bismuth-tantalum
INFINEON TECHNOLOGIES AG2 citations62
US6346424B1Feb 12, 2002
Process for producing high-epsilon dielectric layer or ferroelectric layer
INFINEON TECHNOLOGIES AG6 citations62
US6656787B2Dec 2, 2003
Method for fabricating non-volatile memories
INFINEON TECHNOLOGIES AG0 citations52
US6537900B2Mar 25, 2003
Method for patterning a metal or metal silicide layer and a capacitor structure fabricated by the method
INFINEON TECHNOLOGIES AG0 citations52
US9054150B2Jun 9, 2015
Chip edge sealing
INFINEON TECHNOLOGIES AG0 citations51
US6825116B2Nov 30, 2004
Method for removing structures
INFINEON TECHNOLOGIES AG0 citations49
SIEMENS AG
3 patentsUS6043529AMar 28, 2000
Semiconductor configuration with a protected barrier for a stacked cell
SIEMENS AG72 citations96
US6051485AApr 18, 2000
Method of producing a platinum-metal pattern or structure by a lift-off process
SIEMENS AG13 citations73
US6097050AAug 1, 2000
Memory configuration with self-aligning non-integrated capacitor configuration
SIEMENS AG6 citations63
ENGELHARDT MANFRED
3 patentsUS8093637B2Jan 10, 2012
MIM capacitor and associated production method
ENGELHARDT MANFRED8 citations82
US8877631B2Nov 4, 2014
Interconnect arrangement and associated production methods
ENGELHARDT MANFRED2 citations62
US8709906B2Apr 29, 2014
MIM capacitor and associated production method
ENGELHARDT MANFRED0 citations50