P

Inventor

SCHINDLER GUENTHER

DE42 patents
⚠️ This page may combine multiple inventors who share the name “SCHINDLER GUENTHER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

31 patents
US6708405B2Mar 23, 2004

Method for producing an electrically conducting connection

INFINEON TECHNOLOGIES AG56 citations95
US6323513B1Nov 27, 2001

Semiconductor component having at least one capacitor and methods for fabricating it

INFINEON TECHNOLOGIES AG18 citations93
US7033926B2Apr 25, 2006

Strip conductor arrangement and method for producing a strip conductor arrangement

INFINEON TECHNOLOGIES AG24 citations92
US6438019B2Aug 20, 2002

Ferroelectric random access memory (FeRAM) having storage capacitors with different coercive voltages

INFINEON TECHNOLOGIES AG29 citations92
US7807563B2Oct 5, 2010

Method for manufacturing a layer arrangement and layer arrangement

INFINEON TECHNOLOGIES AG23 citations89
US6586348B2Jul 1, 2003

Method for preventing etching-induced damage to a metal oxide film by patterning the film after a nucleation anneal but while still amorphous and then thermally annealing to crystallize

INFINEON TECHNOLOGIES AG18 citations84
US6559003B2May 6, 2003

Method of producing a ferroelectric semiconductor memory

INFINEON TECHNOLOGIES AG16 citations83
US6888244B2May 3, 2005

Interconnect arrangement and method for fabricating an interconnect arrangement

INFINEON TECHNOLOGIES AG9 citations74
US6649468B2Nov 18, 2003

Method for fabricating a microelectronic component

INFINEON TECHNOLOGIES AG8 citations74
US6627496B1Sep 30, 2003

Process for producing structured layers, process for producing components of an integrated circuit, and process for producing a memory configuration

INFINEON TECHNOLOGIES AG11 citations74
US6197633B1Mar 6, 2001

Method for the production of an integrated semiconductor memory configuration

INFINEON TECHNOLOGIES AG10 citations74
US6168988B1Jan 2, 2001

Method for producing barrier-free semiconductor memory configurations

INFINEON TECHNOLOGIES AG7 citations74
US6136659AOct 24, 2000

Production process for a capacitor electrode formed of a platinum metal

INFINEON TECHNOLOGIES AG12 citations74
US6500677B2Dec 31, 2002

Method for fabricating a ferroelectric memory configuration

INFINEON TECHNOLOGIES AG13 citations72
US6649424B2Nov 18, 2003

Method for fabricating an integrated semiconductor circuit having a strongly polarizable dielectric or ferroelectric

INFINEON TECHNOLOGIES AG10 citations71
US6790676B2Sep 14, 2004

Method for producing a ferroelectric layer

INFINEON TECHNOLOGIES AG7 citations69
US6730562B2May 4, 2004

Method of patterning ferroelectric layers

INFINEON TECHNOLOGIES AG4 citations63
US6670662B1Dec 30, 2003

Semiconductor storage component with storage cells, logic areas and filling structures

INFINEON TECHNOLOGIES AG5 citations63
US6627934B1Sep 30, 2003

Integrated semiconductor memory configuration with a buried plate electrode and method for its fabrication

INFINEON TECHNOLOGIES AG4 citations63
US6316802B1Nov 13, 2001

Easy to manufacture integrated semiconductor memory configuration with platinum electrodes

INFINEON TECHNOLOGIES AG5 citations63
US7755160B2Jul 13, 2010

Plasma excited chemical vapor deposition method silicon/oxygen/nitrogen-containing-material and layered assembly

INFINEON TECHNOLOGIES AG4 citations62
US7276300B2Oct 2, 2007

Microelectronic structure having a hydrogen barrier layer

INFINEON TECHNOLOGIES AG2 citations62
US6852240B2Feb 8, 2005

Method of manufacturing a ferroelectric capacitor configuration

INFINEON TECHNOLOGIES AG3 citations62
US6515891B2Feb 4, 2003

Random access memory with hidden bits

INFINEON TECHNOLOGIES AG5 citations62
US6495415B2Dec 17, 2002

Method for fabricating a patterned layer

INFINEON TECHNOLOGIES AG3 citations62
US6455328B2Sep 24, 2002

Method of manufacture of a capacitor with a dielectric on the basis of strontium-bismuth-tantalum

INFINEON TECHNOLOGIES AG2 citations62
US6346424B1Feb 12, 2002

Process for producing high-epsilon dielectric layer or ferroelectric layer

INFINEON TECHNOLOGIES AG6 citations62
US6656787B2Dec 2, 2003

Method for fabricating non-volatile memories

INFINEON TECHNOLOGIES AG0 citations52
US6537900B2Mar 25, 2003

Method for patterning a metal or metal silicide layer and a capacitor structure fabricated by the method

INFINEON TECHNOLOGIES AG0 citations52
US9054150B2Jun 9, 2015

Chip edge sealing

INFINEON TECHNOLOGIES AG0 citations51
US6825116B2Nov 30, 2004

Method for removing structures

INFINEON TECHNOLOGIES AG0 citations49

SIEMENS AG

3 patents

ENGELHARDT MANFRED

3 patents

SYMETRIX CORP

2 patents

INFINCON TECHNOLOGIES AG

1 patent

SCHINDLER GUENTHER

1 patent

LOGITEX REINSTMEDIENTECHNIK GM

1 patent