Inventor
HAN LIANG-KAI
TW16 patents
⚠️ This page may combine multiple inventors who share the name “HAN LIANG-KAI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
7 patentsUS6096580AAug 1, 2000
Low programming voltage anti-fuse
IBM99 citations97
US6885080B2Apr 26, 2005
Deep trench isolation of embedded DRAM for improved latch-up immunity
IBM48 citations96
US6258673B1Jul 10, 2001
Multiple thickness of gate oxide
IBM69 citations95
US6297127B1Oct 2, 2001
Self-aligned deep trench isolation to shallow trench isolation
IBM40 citations92
US6335262B1Jan 1, 2002
Method for fabricating different gate oxide thicknesses within the same chip
IBM46 citations88
US6369434B1Apr 9, 2002
Nitrogen co-implantation to form shallow junction-extensions of p-type metal oxide semiconductor field effect transistors
IBM2 citations62
US6410402B1Jun 25, 2002
Method of providing variant fills in semiconductor trenches
IBM0 citations42
TAIWAN SEMICONDUCTOR MFG
5 patentsUS7183596B2Feb 27, 2007
Composite gate structure in an integrated circuit
TAIWAN SEMICONDUCTOR MFG58 citations95
US7321139B2Jan 22, 2008
Transistor layout for standard cell with optimized mechanical stress effect
TAIWAN SEMICONDUCTOR MFG20 citations91
US7297587B2Nov 20, 2007
Composite gate structure in an integrated circuit
TAIWAN SEMICONDUCTOR MFG15 citations83
US7534671B2May 19, 2009
Method for integrally forming an electrical fuse device and a MOS transistor
TAIWAN SEMICONDUCTOR MFG3 citations62
US7361968B2Apr 22, 2008
Method for integrally forming an electrical fuse device and a MOS transistor
TAIWAN SEMICONDUCTOR MFG3 citations62