Inventor
LIM CHAN
US35 patents
⚠️ This page may combine multiple inventors who share the name “LIM CHAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HYUNDAI ELECTRONICS IND
16 patentsUS6426307B2Jul 30, 2002
Method of manufacturing an aluminum oxide film in a semiconductor device
HYUNDAI ELECTRONICS IND71 citations96
US6465371B2Oct 15, 2002
Method for manufacturing zirconium oxide film for use in semiconductor device
HYUNDAI ELECTRONICS IND26 citations92
US5985730ANov 16, 1999
Method of forming a capacitor of a semiconductor device
HYUNDAI ELECTRONICS IND26 citations92
US5478769ADec 26, 1995
Process for fabricating a stashed capacitor in a semiconductor device
HYUNDAI ELECTRONICS IND39 citations92
US6589886B2Jul 8, 2003
Method for manufacturing aluminum oxide film for use in a semiconductor device
HYUNDAI ELECTRONICS IND32 citations91
US6403156B2Jun 11, 2002
Method of forming an A1203 film in a semiconductor device
HYUNDAI ELECTRONICS IND43 citations90
US6486021B2Nov 26, 2002
Method for manufacturing a semiconductor device having incorporated therein a high K capacitor dielectric
HYUNDAI ELECTRONICS IND7 citations74
US6355516B1Mar 12, 2002
Method of manufacturing a capacitor with a bi-layer Ta2O5 capacitor dielectric in a semiconductor device including performing a plasma treatment on the first Ta2O5 layer
HYUNDAI ELECTRONICS IND11 citations74
US6329237B1Dec 11, 2001
Method of manufacturing a capacitor in a semiconductor device using a high dielectric tantalum oxide or barium strontium titanate material that is treated in an ozone plasma
HYUNDAI ELECTRONICS IND8 citations74
US6303427B1Oct 16, 2001
Method of manufacturing a capacitor in a semiconductor device
HYUNDAI ELECTRONICS IND14 citations74
US5909625AJun 1, 1999
Method for forming layer of hemispherical grains and for fabricating a capacitor of a semiconductor device
HYUNDAI ELECTRONICS IND7 citations74
US6723598B2Apr 20, 2004
Method for manufacturing aluminum oxide films for use in semiconductor devices
HYUNDAI ELECTRONICS IND8 citations73
US6417042B2Jul 9, 2002
Method of manufacturing a capacitor in a semiconductor device
HYUNDAI ELECTRONICS IND3 citations63
US6281066B1Aug 28, 2001
Method of manufacturing a capacitor in a memory device
HYUNDAI ELECTRONICS IND6 citations63
US6153481ANov 28, 2000
Method for forming an isolation insulating film for internal elements of a semiconductor device
HYUNDAI ELECTRONICS IND5 citations63
US6238995B1May 29, 2001
Method for forming layer of hemispherical grains and for fabricating a capacitor of a semiconductor device
HYUNDAI ELECTRONICS IND0 citations52
INFINEON TECHNOLOGIES AG
4 patentsUS7405482B2Jul 29, 2008
High-k dielectric film, method of forming the same and related semiconductor device
INFINEON TECHNOLOGIES AG4 citations74
US7923336B2Apr 12, 2011
High-k dielectric film, method of forming the same and related semiconductor device
INFINEON TECHNOLOGIES AG3 citations63
US7655099B2Feb 2, 2010
High-k dielectric film, method of forming the same and related semiconductor device
INFINEON TECHNOLOGIES AG3 citations63
US7399702B2Jul 15, 2008
Methods of forming silicide
INFINEON TECHNOLOGIES AG1 citations52
SK HYNIX INC
3 patentsUS11114173B2Sep 7, 2021
Semiconductor memory device and method of operating the same
SK HYNIX INC2 citations69
US10847226B2Nov 24, 2020
Semiconductor device and operating method of a semiconductor device
SK HYNIX INC2 citations68
US10403367B2Sep 3, 2019
Semiconductor memory device and method of operating the same
SK HYNIX INC0 citations48