Inventor
HUA XUEFENG
US17 patents
⚠️ This page may combine multiple inventors who share the name “HUA XUEFENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
4 patentsUS7951657B2May 31, 2011
Method of forming a planar field effect transistor with embedded and faceted source/drain stressors on a silicon-on-insulator (S0I) wafer, a planar field effect transistor structure and a design structure for the planar field effect transistor
IBM35 citations92
US7932136B2Apr 26, 2011
Source/drain junction for high performance MOSFET formed by selective EPI process
IBM8 citations84
US7883829B2Feb 8, 2011
Lithography for pitch reduction
IBM4 citations62
US7936017B2May 3, 2011
Reduced floating body effect without impact on performance-enhancing stress
IBM0 citations52
LAM RES CORP
4 patentsUS12542259B2Feb 3, 2026
Plasma-exclusion-zone rings for processing notched wafers
LAM RES CORP0 citations61
US12525434B2Jan 13, 2026
Arcing reduction in wafer bevel edge plasma processing
LAM RES CORP0 citations49
US12550687B2Feb 10, 2026
Wafer edge deposition for wafer level packaging
LAM RES CORP0 citations46
US12332042B2Jun 17, 2025
In-situ wafer thickness and gap monitoring using through beam laser sensor
LAM RES CORP0 citations44
CHENG KANGGUO
3 patentsUS8525186B2Sep 3, 2013
Method of forming a planar field effect transistor with embedded and faceted source/drain stressors on a silicon-on-insulator (SOI) wafer, a planar field effect transistor structure and a design structure for the planar field effect transistor
CHENG KANGGUO9 citations84
US8324036B2Dec 4, 2012
Device having and method for forming fins with multiple widths for an integrated circuit
CHENG KANGGUO12 citations84
US8569868B2Oct 29, 2013
Device having and method for forming fins with multiple widths
CHENG KANGGUO0 citations52