Inventor
WARD EDMOND
US18 patents
⚠️ This page may combine multiple inventors who share the name “WARD EDMOND”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITY SEMICONDUCTOR CORP
11 patentsUS7538338B2May 26, 2009
Memory using variable tunnel barrier widths
UNITY SEMICONDUCTOR CORP144 citations99
US7884349B2Feb 8, 2011
Selection device for re-writable memory
UNITY SEMICONDUCTOR CORP76 citations98
US7889539B2Feb 15, 2011
Multi-resistive state memory device with conductive oxide electrodes
UNITY SEMICONDUCTOR CORP19 citations96
US7633790B2Dec 15, 2009
Multi-resistive state memory device with conductive oxide electrodes
UNITY SEMICONDUCTOR CORP23 citations96
US7394679B2Jul 1, 2008
Multi-resistive state element with reactive metal
UNITY SEMICONDUCTOR CORP20 citations96
US7082052B2Jul 25, 2006
Multi-resistive state element with reactive metal
UNITY SEMICONDUCTOR CORP35 citations96
US7330370B2Feb 12, 2008
Enhanced functionality in a two-terminal memory array
UNITY SEMICONDUCTOR CORP19 citations93
US7985963B2Jul 26, 2011
Memory using variable tunnel barrier widths
UNITY SEMICONDUCTOR CORP36 citations92
US7326979B2Feb 5, 2008
Resistive memory device with a treated interface
UNITY SEMICONDUCTOR CORP51 citations92
US9159913B2Oct 13, 2015
Two-terminal reversibly switchable memory device
UNITY SEMICONDUCTOR CORP6 citations84
US9831425B2Nov 28, 2017
Two-terminal reversibly switchable memory device
UNITY SEMICONDUCTOR CORP1 citations63
HEFEI RELIANCE MEMORY LTD
4 patentsUS10224480B2Mar 5, 2019
Two-terminal reversibly switchable memory device
HEFEI RELIANCE MEMORY LTD4 citations84
US11672189B2Jun 6, 2023
Two-terminal reversibly switchable memory device
HEFEI RELIANCE MEMORY LTD0 citations62
US11063214B2Jul 13, 2021
Two-terminal reversibly switchable memory device
HEFEI RELIANCE MEMORY LTD0 citations62
US10680171B2Jun 9, 2020
Two-terminal reversibly switchable memory device
HEFEI RELIANCE MEMORY LTD0 citations52