Inventor
HUNKS WILLIAM
US21 patents
⚠️ This page may combine multiple inventors who share the name “HUNKS WILLIAM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED TECH MATERIALS
7 patentsUS7838329B2Nov 23, 2010
Antimony and germanium complexes useful for CVD/ALD of metal thin films
ADVANCED TECH MATERIALS55 citations98
US8008117B2Aug 30, 2011
Antimony and germanium complexes useful for CVD/ALD of metal thin films
ADVANCED TECH MATERIALS14 citations92
US8877549B2Nov 4, 2014
Low temperature deposition of phase change memory materials
ADVANCED TECH MATERIALS7 citations84
US8796068B2Aug 5, 2014
Tellurium compounds useful for deposition of tellurium containing materials
ADVANCED TECH MATERIALS12 citations84
US8709863B2Apr 29, 2014
Antimony and germanium complexes useful for CVD/ALD of metal thin films
ADVANCED TECH MATERIALS9 citations84
US9034688B2May 19, 2015
Antimony compounds useful for deposition of antimony-containing materials
ADVANCED TECH MATERIALS2 citations60
US8053375B1Nov 8, 2011
Super-dry reagent compositions for formation of ultra low k films
ADVANCED TECH MATERIALS0 citations41
ENTEGRIS INC
6 patentsUS9537095B2Jan 3, 2017
Tellurium compounds useful for deposition of tellurium containing materials
ENTEGRIS INC14 citations84
US9219232B2Dec 22, 2015
Antimony and germanium complexes useful for CVD/ALD of metal thin films
ENTEGRIS INC1 citations63
US11476158B2Oct 18, 2022
Cobalt deposition selectivity on copper and dielectrics
ENTEGRIS INC1 citations57
US10870921B2Dec 22, 2020
Cyclopentadienyl titanium alkoxides with ozone activated ligands for ALD of TiO2
ENTEGRIS INC0 citations52
US10043658B2Aug 7, 2018
Precursors for silicon dioxide gap fill
ENTEGRIS INC0 citations52
US9637395B2May 2, 2017
Fluorine free tungsten ALD/CVD process
ENTEGRIS INC1 citations52