Inventor

TADJER MARKO J

US28 patents

⚠️ This page may combine multiple inventors who share the name “TADJER MARKO J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TADJER MARKO J

US GOV SEC NAVY

GaN devices with ion implanted ohmic contacts and method of fabricating devices incorporating the same

GaN devices with ion implanted ohmic contacts and method of fabricating devices incorporating the same

Wafer-scale separation and transfer of GaN material

Heterojunction devices and methods for fabricating the same

Heterojunction devices and methods for fabricating the same

Polarization-engineered heterogeneous semiconductor heterostructures

GaN devices with ion implanted ohmic contacts and method of fabricating devices incorporating the same

Diamond on nanopatterned substrate

Diamond on nanopatterned substrate

Transferring large-area group III-nitride semiconductor material and devices to arbitrary substrates

Polarization-engineered heterogeneous semiconductor heterostructures

Diamond air bridge for thermal management of high power devices

β-Ga2O3 junction barrier Schottky (JBS) diodes with sputtered p-type NiO

US NAVY

Damage-free plasma-enhanced CVD passivation of AlGaN/GaN high electron mobility transistors

Transistor with diamond gate

Method of mediating forward voltage drift in a SiC device

Diamond air bridge for thermal management of high power devices

Metal nitride alloy contact for semiconductor

Removal of basal plane dislocations from silicon carbide substrate surface by high temperature annealing and preserving surface morphology

HOBART KARL D

Nanocrystalline diamond three-dimensional films in patterned semiconductor substrates

Nanocrystalline diamond three-dimensional films in patterned semiconductor substrates

Transparent nanocrystalline diamond contacts to wide bandgap semiconductor devices

KOEHLER ANDREW D

Transistor with diamond gate

MAHADIK NADEEMULLAH A

Elimination of basal plane dislocations in post growth silicon carbide epitaxial layers by high temperature annealing while preserving surface morphology

UNIV MICHIGAN REGENTS

Doped aluminum-alloyed gallium oxide and ohmic contacts

NORTHROP GRUMMAN SYSTEMS CORP

Selective deposition of diamond in thermal vias

The Government of the United State of America as represented by the Secretary of the Navy

UV laser slicing of β-Ga2O3 by micro-crack generation and propagation

TADJER MARKO J

Basal plane dislocation elimination in 4H—SiC by pulsed rapid thermal annealing