Inventor

AKTAS OZGUR

US30 patents

⚠️ This page may combine multiple inventors who share the name “AKTAS OZGUR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

AKTAS OZGUR

QROMIS INC

RF device integrated on an engineered substrate

Methods of forming a vertical semiconductor diode using an engineered substrate

Gallium nitride epitaxial structures for power devices

Vertical semiconductor diode manufactured with an engineered substrate

Power and RF devices implemented using an engineered substrate structure

Methods for integration of elemental and compound semiconductors on a ceramic substrate

Gallium nitride epitaxial structures for power devices

Aluminum nitride based Silicon-on-Insulator substrate structure

Methods for integrated devices on an engineered substrate

Electronic power devices integrated with an engineered substrate

Electronic power devices integrated with an engineered substrate

Method and system for vertical power devices

Systems for fabrication of MMIC and RF devices on engineered substrates

Method and system for diffusing magnesium in gallium nitride materials using sputtered magnesium sources

Integrated circuit devices with an engineered substrate

Gallium nitride epitaxial structures for power devices

System for integration of elemental and compound semiconductors on a ceramic substrate

RF device integrated on an engineered substrate

Systems and method for integrated devices on an engineered substrate

RF device integrated on an engineered substrate

Methods of manufacturing vertical semiconductor diodes using an engineered substrate

Gallium-nitride based devices implementing an engineered substrate structure

Method and system for forming doped regions by diffusion gallium nitride materials

Lateral high electron mobility transistor with integrated clamp diode

Lateral high electron mobility transistor with integrated clamp diode

Vertical gallium nitride Schottky diode

Lateral gallium nitride JFET with controlled doping profile

AVOGY INC

Gallium nitride field effect transistor with buried field plate protected lateral channel

Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layer

Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layer