Inventor

MATSUMOTO HIDETOSHI

JP67 patents

⚠️ This page may combine multiple inventors who share the name “MATSUMOTO HIDETOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MATSUMOTO HIDETOSHI

RENESAS TECH CORP

Radio frequency circuit module

Radio frequency power amplifier

Power amplifier module

RF power amplifier

High-frequency power amplifier and radio communication equipment using the same

Amplifier and radio frequency power amplifier using the same

Radio frequency power amplifier

High-frequency power amplifier module

High-frequency power amplifier

Radio frequency power amplifier module

Semiconductor device, manufacturing thereof and power amplifier module

Power amplifier module

High frequency power amplifier

Radio frequency power amplifier

Semiconductor HBT MMIC device and semiconductor module

MURATA MANUFACTURING CO

Power amplifier module

Matching network and power amplifier circuit

Power amplification module

Power amplifier module

Communication unit

Power amplifier module

Power amplifier module

Matching network and power amplifier circuit

High-frequency-signal transceiver circuit

Power amplifier circuit

Power amplifier circuit

Power amplifier module

Power supply circuit

Power amplifier evaluation method and measurement system

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

Method for manufacturing fine pattern

Method for manufacturing fine pattern, and color filter, shading pattern filter and color LCD element formed and printed board by using the same

Magnetic record medium with a magnetic layer coated with successive layers of carbon, organic amine, and fluoro lubricant

Magnetoresistive thin film head

OMRON TATEISI ELECTRONICS CO

Optical distance measuring apparatus and method using light projection pulses

Measuring circuit device

Motor rotation speed controlling apparatus

Timer circuit

HITACHI LTD

Semiconductor device using whiskers

Semiconductor device having first and second stacked semiconductor layers, with electrical contact to the first semiconductor layer

Semiconductor device having reduced contact resistance between a channel or base layer and a contact layer

TANOUE TOMONORI

High frequency power amplifier, transmitter and mobile communication terminal using the power amplifier

High frequency power amplifier, transmitter and mobile communication terminal using the power amplifier

SHINETSU HANDOTAI KK

Method for producing a gallium phosphide epitaxial wafer

Method of making gap red light emitting element substrate by LPE

RENESAS ELECTRONICS CORP

RF power amplifying device and wireless communication terminal device

HASE MASATOSHI

Semiconductor device

ASAHI GLASS CO LTD

Glass capillary tube and method for its production

OMROM CORP

Metal detector protected from malfunction caused by radio waves

CEMEDINE CO LTD

Rapid curing adhesion method

TOKYO INST TECH

Electroconductive nanowire network, and electroconductive substrate and transparent electrode using same, and method for manufacturing electroconductive nanowire network, electroconductive substrate, and transparent electrode