Inventor
MAGNEE PETRUS HUBERTUS CORNELIS
NL19 patents
⚠️ This page may combine multiple inventors who share the name “MAGNEE PETRUS HUBERTUS CORNELIS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NXP BV
16 patentsUS9905679B2Feb 27, 2018
Semiconductor device comprising a bipolar transistor
NXP BV7 citations81
US9570546B2Feb 14, 2017
Bipolar transistor
NXP BV8 citations79
US10490407B2Nov 26, 2019
Method of making a semiconductor switch device
NXP BV1 citations60
US11901414B2Feb 13, 2024
Semiconductor device with a defect layer and method of fabrication therefor
NXP BV0 citations51
US9431524B2Aug 30, 2016
Method of manufacturing IC comprising a bipolar transistor and IC
NXP BV0 citations51
US8946042B2Feb 3, 2015
Bipolar transistor manufacturing method, bipolar transistor and integrated circuit
NXP BV0 citations51
US9111987B2Aug 18, 2015
Method of manufacturing a bipolar transistor, bipolar transistor and integrated circuit
NXP BV1 citations49
US7915709B2Mar 29, 2011
Semiconductor device and method of manufacturing the same
NXP BV0 citations49
US7794540B2Sep 14, 2010
Method of manufacturing a semiconductor device
NXP BV0 citations49
US11990536B2May 21, 2024
Bipolar transistors with multilayer collectors
NXP BV0 citations45
US7566919B2Jul 28, 2009
Method to reduce seedlayer topography in BICMOS process
NXP BV0 citations43
US10825900B2Nov 3, 2020
Semiconductor switch device and method having at least two contacts located on either the source region or the drain region
NXP BV0 citations38
US10431666B2Oct 1, 2019
Method of making a semiconductor switch device
NXP BV0 citations38
US10784257B2Sep 22, 2020
Integrating silicon-BJT to a silicon-germanium-HBT manufacturing process
NXP BV0 citations37
US10566423B2Feb 18, 2020
Semiconductor switch device and a method of making a semiconductor switch device
NXP BV0 citations37
US9484398B2Nov 1, 2016
Metal-insulator-metal (MIM) capacitor
NXP BV0 citations30