P

Inventor

OKUDAIRA TOMONORI

JP39 patents
⚠️ This page may combine multiple inventors who share the name “OKUDAIRA TOMONORI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

27 patents
US6096133AAug 1, 2000

Chemical vapor deposition apparatus

MITSUBISHI ELECTRIC CORP409 citations99
US5776254AJul 7, 1998

Apparatus for forming thin film by chemical vapor deposition

MITSUBISHI ELECTRIC CORP132 citations99
US5572052ANov 5, 1996

Electronic device using zirconate titanate and barium titanate ferroelectrics in insulating layer

MITSUBISHI ELECTRIC CORP221 citations99
US5519237AMay 21, 1996

Semiconductor memory device

MITSUBISHI ELECTRIC CORP43 citations96
US5459345AOct 17, 1995

Semiconductor device high dielectric capacitor with narrow contact hole

MITSUBISHI ELECTRIC CORP57 citations96
US5453952ASep 26, 1995

Semiconductor device having peripheral circuit formed of TFT (thin film transistor)

MITSUBISHI ELECTRIC CORP80 citations96
US5442213AAug 15, 1995

Semiconductor device with high dielectric capacitor having sidewall spacers

MITSUBISHI ELECTRIC CORP82 citations96
US5418388AMay 23, 1995

Semiconductor device having a capacitor with an adhesion layer

MITSUBISHI ELECTRIC CORP72 citations96
US5164806ANov 17, 1992

Element isolating structure of semiconductor device suitable for high density integration

MITSUBISHI ELECTRIC CORP68 citations96
US5428239AJun 27, 1995

Semiconductor device having retrograde well and diffusion-type well

MITSUBISHI ELECTRIC CORP48 citations93
US5404042AApr 4, 1995

Semiconductor memory device having a plurality of well regions of different conductivities

MITSUBISHI ELECTRIC CORP26 citations93
US5364811ANov 15, 1994

Method of manufacturing a semiconductor memory device with multiple device forming regions

MITSUBISHI ELECTRIC CORP26 citations93
US5218219AJun 8, 1993

Semiconductor memory device having a peripheral wall at the boundary region of a memory cell array region and a peripheral circuit region

MITSUBISHI ELECTRIC CORP35 citations93
US6278150B1Aug 21, 2001

Conductive layer connecting structure and method of manufacturing the same

MITSUBISHI ELECTRIC CORP30 citations92
US6078072AJun 20, 2000

Semiconductor device having a capacitor

MITSUBISHI ELECTRIC CORP49 citations92
US5672533ASep 30, 1997

Field effect transistor having impurity regions of different depths and manufacturing method thereof

MITSUBISHI ELECTRIC CORP37 citations92
US5668041ASep 16, 1997

Method of manufacturing a semiconductor device having a capacitor

MITSUBISHI ELECTRIC CORP18 citations92
US5534458AJul 9, 1996

Method of manufacturing a semiconductor device with high dielectric capacitor having sidewall spacers

MITSUBISHI ELECTRIC CORP27 citations92
US5489791AFeb 6, 1996

Field effect transistor having impurity regions of different depths and manufacturing method thereof

MITSUBISHI ELECTRIC CORP22 citations92
US5229314AJul 20, 1993

Method of manufacturing field effect transistor having a multilayer interconnection layer therein with tapered sidewall insulation

MITSUBISHI ELECTRIC CORP33 citations92
US5276344AJan 4, 1994

Field effect transistor having impurity regions of different depths and manufacturing method thereof

MITSUBISHI ELECTRIC CORP17 citations82
US6407419B1Jun 18, 2002

Semiconductor device and manufacturing method thereof

MITSUBISHI ELECTRIC CORP12 citations74
US5972748AOct 26, 1999

Semiconductor memory device and method of manufacturing the same

MITSUBISHI ELECTRIC CORP7 citations74
US5753527AMay 19, 1998

Method of manufacturing a semiconductor memory device

MITSUBISHI ELECTRIC CORP13 citations74
US5652186AJul 29, 1997

Semiconductor device and a method of manufacturing thereof

MITSUBISHI ELECTRIC CORP4 citations74
US6506613B1Jan 14, 2003

Method for manufacturing semiconductor device having a capacitor

MITSUBISHI ELECTRIC CORP2 citations63
US5157469AOct 20, 1992

Field effect transistor having a multilayer interconnection layer therein with tapered sidewall insulators

MITSUBISHI ELECTRIC CORP0 citations42

RENESAS TECH CORP

4 patents

RENESAS ELECTRONICS CORP

4 patents

TSUTSUMI TOSHIAKI

2 patents

MITSUSHITA DENKI KABUSHIKI KAI

1 patent

YAMAGUCHI TADASHI

1 patent