Inventor
OKUDAIRA TOMONORI
JP39 patents
⚠️ This page may combine multiple inventors who share the name “OKUDAIRA TOMONORI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
27 patentsUS6096133AAug 1, 2000
Chemical vapor deposition apparatus
MITSUBISHI ELECTRIC CORP409 citations99
US5776254AJul 7, 1998
Apparatus for forming thin film by chemical vapor deposition
MITSUBISHI ELECTRIC CORP132 citations99
US5572052ANov 5, 1996
Electronic device using zirconate titanate and barium titanate ferroelectrics in insulating layer
MITSUBISHI ELECTRIC CORP221 citations99
US5519237AMay 21, 1996
Semiconductor memory device
MITSUBISHI ELECTRIC CORP43 citations96
US5459345AOct 17, 1995
Semiconductor device high dielectric capacitor with narrow contact hole
MITSUBISHI ELECTRIC CORP57 citations96
US5453952ASep 26, 1995
Semiconductor device having peripheral circuit formed of TFT (thin film transistor)
MITSUBISHI ELECTRIC CORP80 citations96
US5442213AAug 15, 1995
Semiconductor device with high dielectric capacitor having sidewall spacers
MITSUBISHI ELECTRIC CORP82 citations96
US5418388AMay 23, 1995
Semiconductor device having a capacitor with an adhesion layer
MITSUBISHI ELECTRIC CORP72 citations96
US5164806ANov 17, 1992
Element isolating structure of semiconductor device suitable for high density integration
MITSUBISHI ELECTRIC CORP68 citations96
US5428239AJun 27, 1995
Semiconductor device having retrograde well and diffusion-type well
MITSUBISHI ELECTRIC CORP48 citations93
US5404042AApr 4, 1995
Semiconductor memory device having a plurality of well regions of different conductivities
MITSUBISHI ELECTRIC CORP26 citations93
US5364811ANov 15, 1994
Method of manufacturing a semiconductor memory device with multiple device forming regions
MITSUBISHI ELECTRIC CORP26 citations93
US5218219AJun 8, 1993
Semiconductor memory device having a peripheral wall at the boundary region of a memory cell array region and a peripheral circuit region
MITSUBISHI ELECTRIC CORP35 citations93
US6278150B1Aug 21, 2001
Conductive layer connecting structure and method of manufacturing the same
MITSUBISHI ELECTRIC CORP30 citations92
US6078072AJun 20, 2000
Semiconductor device having a capacitor
MITSUBISHI ELECTRIC CORP49 citations92
US5672533ASep 30, 1997
Field effect transistor having impurity regions of different depths and manufacturing method thereof
MITSUBISHI ELECTRIC CORP37 citations92
US5668041ASep 16, 1997
Method of manufacturing a semiconductor device having a capacitor
MITSUBISHI ELECTRIC CORP18 citations92
US5534458AJul 9, 1996
Method of manufacturing a semiconductor device with high dielectric capacitor having sidewall spacers
MITSUBISHI ELECTRIC CORP27 citations92
US5489791AFeb 6, 1996
Field effect transistor having impurity regions of different depths and manufacturing method thereof
MITSUBISHI ELECTRIC CORP22 citations92
US5229314AJul 20, 1993
Method of manufacturing field effect transistor having a multilayer interconnection layer therein with tapered sidewall insulation
MITSUBISHI ELECTRIC CORP33 citations92
US5276344AJan 4, 1994
Field effect transistor having impurity regions of different depths and manufacturing method thereof
MITSUBISHI ELECTRIC CORP17 citations82
US6407419B1Jun 18, 2002
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP12 citations74
US5972748AOct 26, 1999
Semiconductor memory device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP7 citations74
US5753527AMay 19, 1998
Method of manufacturing a semiconductor memory device
MITSUBISHI ELECTRIC CORP13 citations74
US5652186AJul 29, 1997
Semiconductor device and a method of manufacturing thereof
MITSUBISHI ELECTRIC CORP4 citations74
US6506613B1Jan 14, 2003
Method for manufacturing semiconductor device having a capacitor
MITSUBISHI ELECTRIC CORP2 citations63
US5157469AOct 20, 1992
Field effect transistor having a multilayer interconnection layer therein with tapered sidewall insulators
MITSUBISHI ELECTRIC CORP0 citations42
RENESAS TECH CORP
4 patentsUS6746876B2Jun 8, 2004
Capacitor manufacturing method having dielectric formed before electrode
RENESAS TECH CORP27 citations92
US6764896B2Jul 20, 2004
Semiconductor manufacturing method including patterning a capacitor lower electrode by chemical etching
RENESAS TECH CORP9 citations74
US7696050B2Apr 13, 2010
Method of manufacturing semiconductor device carrying out ion implantation before silicide process
RENESAS TECH CORP3 citations63
US7517800B2Apr 14, 2009
Semiconductor device and manufacturing method thereof
RENESAS TECH CORP2 citations63
RENESAS ELECTRONICS CORP
4 patentsUS7936016B2May 3, 2011
Semiconductor device and manufacturing method thereof
RENESAS ELECTRONICS CORP6 citations74
US8022445B2Sep 20, 2011
Method of manufacturing a semiconductor device
RENESAS ELECTRONICS CORP1 citations52
US7872314B2Jan 18, 2011
Method of manufacturing semiconductor device carrying out ion implantation before silicide process
RENESAS ELECTRONICS CORP0 citations52
US9503018B2Nov 22, 2016
Semiconductor device
RENESAS ELECTRONICS CORP0 citations51