Inventor
LEE STEVEN S
US29 patents
⚠️ This page may combine multiple inventors who share the name “LEE STEVEN S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
AT & T GLOBAL INF SOLUTION
8 patentsUS5728626AMar 17, 1998
Spin-on conductor process for integrated circuits
AT & T GLOBAL INF SOLUTION73 citations96
US5581861ADec 10, 1996
Method for making a solid-state ink jet print head
AT & T GLOBAL INF SOLUTION49 citations96
US5459501AOct 17, 1995
Solid-state ink-jet print head
AT & T GLOBAL INF SOLUTION84 citations96
US5672905ASep 30, 1997
Semiconductor fuse and method
AT & T GLOBAL INF SOLUTION23 citations93
US5447880ASep 5, 1995
Method for forming an amorphous silicon programmable element
AT & T GLOBAL INF SOLUTION20 citations92
US5543361AAug 6, 1996
Process for forming titanium silicide local interconnect
AT & T GLOBAL INF SOLUTION7 citations74
US5516718AMay 14, 1996
Method of making BI-CMOS integrated circuit having a polysilicon emitter
AT & T GLOBAL INF SOLUTION16 citations74
US5443996AAug 22, 1995
Process for forming titanium silicide local interconnect
AT & T GLOBAL INF SOLUTION7 citations74
NCR CO
7 patentsUS4820654AApr 11, 1989
Isolation of regions in a CMOS structure using selective epitaxial growth
NCR CO64 citations96
US4855258AAug 8, 1989
Native oxide reduction for sealing nitride deposition
NCR CO36 citations93
US5288666AFeb 22, 1994
Process for forming self-aligned titanium silicide by heating in an oxygen rich environment
NCR CO26 citations92
US5248350ASep 28, 1993
Structure for improving gate oxide integrity for a semiconductor formed by a recessed sealed sidewall field oxidation process
NCR CO29 citations92
US4986879AJan 22, 1991
Structure and process for forming semiconductor field oxide using a sealing sidewall of consumable nitride
NCR CO26 citations92
US4910165AMar 20, 1990
Method for forming epitaxial silicon on insulator structures using oxidized porous silicon
NCR CO39 citations92
US4923563AMay 8, 1990
Semiconductor field oxide formation process using a sealing sidewall of consumable nitride
NCR CO20 citations82
HYUNDAI ELECTRONICS AMERICA
4 patentsUS6232649B1May 15, 2001
Bipolar silicon-on-insulator structure and process
HYUNDAI ELECTRONICS AMERICA34 citations92
US5904535AMay 18, 1999
Method of fabricating a bipolar integrated structure
HYUNDAI ELECTRONICS AMERICA20 citations92
US5963825AOct 5, 1999
Method of fabrication of semiconductor fuse with polysilicon plate
HYUNDAI ELECTRONICS AMERICA16 citations74
US6593178B1Jul 15, 2003
BI-CMOS integrated circuit
HYUNDAI ELECTRONICS AMERICA3 citations63