Inventor
FANG PENG
US22 patents
⚠️ This page may combine multiple inventors who share the name “FANG PENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
13 patentsUS5600578AFeb 4, 1997
Test method for predicting hot-carrier induced leakage over time in short-channel IGFETs and products designed in accordance with test results
ADVANCED MICRO DEVICES INC103 citations97
US5932911AAug 3, 1999
Bar field effect transistor
ADVANCED MICRO DEVICES INC50 citations96
US5904528AMay 18, 1999
Method of forming asymmetrically doped source/drain regions
ADVANCED MICRO DEVICES INC54 citations96
US5606518AFeb 25, 1997
Test method for predicting hot-carrier induced leakage over time in short-channel IGFETS and products designed in accordance with test results
ADVANCED MICRO DEVICES INC56 citations96
US5994776ANov 30, 1999
Interlevel dielectric with multiple air gaps between conductive lines of an integrated circuit
ADVANCED MICRO DEVICES INC58 citations95
US6143632ANov 7, 2000
Deuterium doping for hot carrier reliability improvement
ADVANCED MICRO DEVICES INC24 citations92
US6140186AOct 31, 2000
Method of forming asymmetrically doped source/drain regions
ADVANCED MICRO DEVICES INC19 citations92
US6133746AOct 17, 2000
Method for determining a reliable oxide thickness
ADVANCED MICRO DEVICES INC20 citations92
US6023100AFeb 8, 2000
Metallization stack structure to improve electromigration resistance and keep low resistivity of ULSI interconnects
ADVANCED MICRO DEVICES INC31 citations91
US5891802AApr 6, 1999
Method for fabricating a metallization stack structure to improve electromigration resistance and keep low resistivity of ULSI interconnects
ADVANCED MICRO DEVICES INC19 citations91
US6216099B1Apr 10, 2001
Test system and methodology to improve stacked NAND gate based critical path performance and reliability
ADVANCED MICRO DEVICES INC29 citations86
US6043102AMar 28, 2000
Assessing plasma induced gate dielectric degradation with stress induced leakage current measurements
ADVANCED MICRO DEVICES INC17 citations82
US6180441B1Jan 30, 2001
Bar field effect transistor
ADVANCED MICRO DEVICES INC14 citations73
NORROY BIOSCIENCE CO LTD
3 patentsUSD1022246SApr 9, 2024
Waste gas treatment device for radiopharmaceutical synthesis
NORROY BIOSCIENCE CO LTD13 citations78
USD1039167SAug 13, 2024
Radiopharmaceutical synthesis device
NORROY BIOSCIENCE CO LTD4 citations67
US12564650B2Mar 3, 2026
Carbonic anhydrase IX-targeting radioactive diagnostic and therapeutic medicament and method for preparing same
NORROY BIOSCIENCE CO LTD0 citations57