P

Inventor

KUNISATO TATSUYA

JP23 patents
⚠️ This page may combine multiple inventors who share the name “KUNISATO TATSUYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SANYO ELECTRIC CO

22 patents
US6994751B2Feb 7, 2006

Nitride-based semiconductor element and method of forming nitride-based semiconductor

SANYO ELECTRIC CO127 citations99
US6720196B2Apr 13, 2004

Nitride-based semiconductor element and method of forming nitride-based semiconductor

SANYO ELECTRIC CO97 citations98
US6162656ADec 19, 2000

Manufacturing method of light emitting device

SANYO ELECTRIC CO48 citations95
US5990496ANov 23, 1999

Light emitting device with cap layer

SANYO ELECTRIC CO78 citations95
US7968897B2Jun 28, 2011

Light-emitting device having a support substrate and inclined sides

SANYO ELECTRIC CO30 citations92
US7488613B2Feb 10, 2009

Nitride-based light-emitting device and method of manufacturing the same

SANYO ELECTRIC CO19 citations92
US7154123B2Dec 26, 2006

Nitride-based semiconductor light-emitting device

SANYO ELECTRIC CO15 citations84
US6759139B2Jul 6, 2004

Nitride-based semiconductor element and method of forming nitride-based semiconductor

SANYO ELECTRIC CO13 citations84
US6734503B2May 11, 2004

Nitride-based semiconductor element

SANYO ELECTRIC CO16 citations84
US7312480B2Dec 25, 2007

Semiconductor device and method of fabricating the same

SANYO ELECTRIC CO11 citations83
US5608752AMar 4, 1997

Semiconductor laser device and method of designing the same

SANYO ELECTRIC CO18 citations83
US7892874B2Feb 22, 2011

Nitride-based light-emitting device and method of manufacturing the same

SANYO ELECTRIC CO5 citations74
US7829900B2Nov 9, 2010

Nitride-based semiconductor element and method of forming nitride-based semiconductor

SANYO ELECTRIC CO7 citations74
US7355208B2Apr 8, 2008

Nitride-based semiconductor element and method of forming nitride-based semiconductor

SANYO ELECTRIC CO8 citations74
US7279344B2Oct 9, 2007

Method of forming a nitride-based semiconductor

SANYO ELECTRIC CO4 citations74
US7109530B2Sep 19, 2006

Nitride-based semiconductor element

SANYO ELECTRIC CO5 citations74
US6713845B2Mar 30, 2004

Nitride-based semiconductor element

SANYO ELECTRIC CO5 citations74
US7592630B2Sep 22, 2009

Nitride-based light-emitting device and method of manufacturing the same

SANYO ELECTRIC CO4 citations63
US6928096B2Aug 9, 2005

Nitride-based semiconductor laser device and method of fabricating the same

SANYO ELECTRIC CO6 citations63
USRE42074EJan 25, 2011

Manufacturing method of light emitting device

SANYO ELECTRIC CO2 citations62
US7768204B2Aug 3, 2010

Illumination device and manufacturing method thereof

SANYO ELECTRIC CO0 citations40
US7750551B2Jul 6, 2010

Light emitting device and method for manufacturing the same

SANYO ELECTRIC CO0 citations40

PANASONIC IP MAN CO LTD

1 patent