Inventor

CHUNG BYUNG-HONG

KR17 patents

⚠️ This page may combine multiple inventors who share the name “CHUNG BYUNG-HONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHUNG BYUNG-HONG

SAMSUNG ELECTRONICS CO LTD

Method of forming semiconductor device containing oxide/nitride/oxide dielectric layer

Non-volatile memory device having a bit line contact pad and method for manufacturing the same

Method for self-aligned shallow trench isolation and method of manufacturing non-volatile memory device comprising the same

Methods of forming isolated semiconductor device active regions

Semiconductor device having supporter and method of forming the same

Nonvolatile memory device and method of manufacturing the same

Semiconductor device having supporter

Integrated circuit devices including electrode support structures and methods of fabricating the same

Wiring structure of a semiconductor device, method of forming the wiring structure, non-volatile memory device including the wiring structure, and method of manufacturing the non-volatile memory device

Method for forming a device isolation film of a semiconductor device

Method of fabricating non-volatile memory device having separate charge trap patterns

Nonvolatile memory device and method of manufacturing the same

Method of manufacturing a semiconductor device

CHUNG BYUNG-HONG

Methods of forming fine patterns for semiconductor device

Method of fabricating nonvolatile memory device

SAMSUNG ELECTRONICS CO LTE

Non-volatile memory device having a bit line contact pad and method for manufacturing the same

SAMSUNG ELECTRONICS COL LTD

Dual gate oxide structure in semiconductor device and method thereof