Inventor
NAM JEONG-LIM
KR18 patents
⚠️ This page may combine multiple inventors who share the name “NAM JEONG-LIM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
15 patentsUS8003543B2Aug 23, 2011
Method of forming a hard mask and method of forming a fine pattern of semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD21 citations92
US7732341B2Jun 8, 2010
Method of forming a hard mask and method of forming a fine pattern of semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD18 citations92
US7540970B2Jun 2, 2009
Methods of fabricating a semiconductor device
SAMSUNG ELECTRONICS CO LTD27 citations92
US7560768B2Jul 14, 2009
Nonvolatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US6843257B2Jan 18, 2005
Wafer cleaning system
SAMSUNG ELECTRONICS CO LTD16 citations83
US6649471B2Nov 18, 2003
Method of planarizing non-volatile memory device
SAMSUNG ELECTRONICS CO LTD20 citations82
US6372042B1Apr 16, 2002
System for processing semiconductor wafers producing a downward laminar flow of clean air in front of baking units
SAMSUNG ELECTRONICS CO LTD16 citations79
US7687369B2Mar 30, 2010
Method of forming fine metal patterns for a semiconductor device using a damascene process
SAMSUNG ELECTRONICS CO LTD7 citations74
US7678650B2Mar 16, 2010
Nonvolatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations62
US7645668B2Jan 12, 2010
Charge trapping type semiconductor memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US7089947B2Aug 15, 2006
Apparatus and method for cleaning a semiconductor wafer
SAMSUNG ELECTRONICS CO LTD2 citations62
US7017597B2Mar 28, 2006
Megasonic cleaning apparatus for fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations62
US6841338B2Jan 11, 2005
Photoresist composition and method of forming a photoresist pattern with a controlled remnant ratio
SAMSUNG ELECTRONICS CO LTD3 citations60
US7829437B2Nov 9, 2010
Method of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations52
US7097949B2Aug 29, 2006
Phase edge phase shift mask enforcing a width of a field gate image and fabrication method thereof
SAMSUNG ELECTRONICS CO LTD1 citations48