Inventor

BALIGA BANTVAL JAYANT

US30 patents

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BALIGA BANTVAL JAYANT

UNIV NORTH CAROLINA STATE

Power semiconductor devices having trench-based gate electrodes and field plates

Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein

Power semiconductor devices having improved high frequency switching and breakdown characteristics

Methods of forming power semiconductor devices having T-shaped gate electrodes

Power semiconductor devices that utilize buried insulating regions to achieve higher than parallel-plane breakdown voltages

Methods of forming silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein

Depleted base transistor with high forward voltage blocking capability

Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance

Methods of forming silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein

Semiconductor switching devices having buried gate electrodes and methods of forming same

Bidirectional silicon carbide power devices having voltage supporting regions therein for providing improved blocking voltage capability

Power MOSFET and JBSFET cell topologies with superior high frequency figure of merit

Monolithically-integrated AC switch having JBSFETs therein with commonly-connected drain and cathode electrodes

Power MOSFETs with superior high frequency figure-of-merit

Power devices having tunable saturation current clamps therein that support improved short-circuit capability

SILICON SEMICONDUCTOR CORP

Methods of forming vertical mosfets having trench-based gate electrodes within deeper trench-based source electrodes

Vertical power devices having trench-based electrodes therein

Integrated circuit power devices having junction barrier controlled schottky diodes therein

Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes therein

Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes

Radio frequency (RF) power devices having faraday shield layers therein

Packaged power devices having vertical power mosfets therein that are flip-chip mounted to slotted gate electrode strip lines

Methods of forming power semiconductor devices having laterally extending base shielding regions

Power semiconductor devices having laterally extending base shielding regions that inhibit base reach-through

Vertical power devices having retrograded-doped transition regions therein

SILICON WIRELESS CORP

Vertical power devices having insulated source electrodes in discontinuous deep trenches

MOSFET devices having linear transfer characteristics when operating in velocity saturation mode and methods of forming and operating same

MICRO OHM CORP

Methods of forming power semiconductor devices having tapered trench-based insulating regions therein

Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same

GEN ELECTRIC

Gate modulated bipolar transistor