Inventor
MEISTER THOMAS
DE25 patents
⚠️ This page may combine multiple inventors who share the name “MEISTER THOMAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
15 patentsUS7449389B2Nov 11, 2008
Method for fabricating a semiconductor structure
INFINEON TECHNOLOGIES AG16 citations84
US6635545B2Oct 21, 2003
Method for fabricating a bipolar transistor and method for fabricating an integrated circuit configuration having such a bipolar transistor
INFINEON TECHNOLOGIES AG13 citations84
US7719088B2May 18, 2010
High-frequency bipolar transistor
INFINEON TECHNOLOGIES AG7 citations74
US7612430B2Nov 3, 2009
Silicon bipolar transistor, circuit arrangement and method for producing a silicon bipolar transistor
INFINEON TECHNOLOGIES AG7 citations73
US7371650B2May 13, 2008
Method for producing a transistor structure
INFINEON TECHNOLOGIES AG7 citations73
US7420228B2Sep 2, 2008
Bipolar transistor comprising carbon-doped semiconductor
INFINEON TECHNOLOGIES AG8 citations72
US7105415B2Sep 12, 2006
Method for the production of a bipolar transistor
INFINEON TECHNOLOGIES AG8 citations72
US7968972B2Jun 28, 2011
High-frequency bipolar transistor and method for the production thereof
INFINEON TECHNOLOGIES AG2 citations63
US7947552B2May 24, 2011
Process for the simultaneous deposition of crystalline and amorphous layers with doping
INFINEON TECHNOLOGIES AG2 citations63
US7064360B2Jun 20, 2006
Bipolar transistor and method for fabricating it
INFINEON TECHNOLOGIES AG2 citations63
US6867105B2Mar 15, 2005
Bipolar transistor and method of fabricating a bipolar transistor
INFINEON TECHNOLOGIES AG4 citations63
US8003475B2Aug 23, 2011
Method for fabricating a transistor structure
INFINEON TECHNOLOGIES AG2 citations62
US7285470B2Oct 23, 2007
Method for the production of a bipolar semiconductor component, especially a bipolar transistor, and corresponding bipolar semiconductor component
INFINEON TECHNOLOGIES AG6 citations61
US7135757B2Nov 14, 2006
Bipolar transistor
INFINEON TECHNOLOGIES AG1 citations52
US7256472B2Aug 14, 2007
Bipolar transistor
INFINEON TECHNOLOGIES AG0 citations49
SIEMENS AG
7 patentsUS5432120AJul 11, 1995
Method for producing a laterally limited single-crystal region with selective epitaxy and the employment thereof for manufacturing a bipolar transistor as well as a MOS transistor
SIEMENS AG88 citations96
US5643836AJul 1, 1997
Method for producing a semiconductor layer structure having a planarized surface and the use thereof in the manufacture of bipolar transistors and DRAMS
SIEMENS AG26 citations92
US5402002AMar 28, 1995
Bipolar transistor with reduced base/collector capacitance
SIEMENS AG20 citations92
US5326718AJul 5, 1994
Method for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistor
SIEMENS AG33 citations92
US5498567AMar 12, 1996
Method for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistor
SIEMENS AG16 citations82
US5422303AJun 6, 1995
Method for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistor
SIEMENS AG17 citations82
US5177582AJan 5, 1993
CMOS-compatible bipolar transistor with reduced collector/substrate capacitance and process for producing the same
SIEMENS AG17 citations73