P

Inventor

SONG JONG-HEUI

KR13 patents

Patents

13 patents
US6239022B1May 29, 2001

Method of fabricating a contact in a semiconductor device

SAMSUNG ELECTRONICS CO LTD53 citations96
US6074519AJun 13, 2000

Plasma etching apparatus having a sealing member coupling an upper electrode to an etching chamber

SAMSUNG ELECTRONICS CO LTD20 citations89
US6124216ASep 26, 2000

Method of making intermetal dielectric layers having a low dielectric constant

SAMSUNG ELECTRONICS CO LTD43 citations88
US7667221B2Feb 23, 2010

Phase change memory devices and methods for fabricating the same

SAMSUNG ELECTRONICS CO LTD11 citations84
US7157770B2Jan 2, 2007

MOS transistor with recessed gate and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD12 citations84
US7745290B2Jun 29, 2010

Methods of fabricating semiconductor device including fin-fet

SAMSUNG ELECTRONICS CO LTD15 citations83
US6808975B2Oct 26, 2004

Method for forming a self-aligned contact hole in a semiconductor device

SAMSUNG ELECTRONICS CO LTD14 citations83
US8372198B2Feb 12, 2013

Methods of forming dual damascene structures

SAMSUNG ELECTRONICS CO LTD10 citations82
US7326619B2Feb 5, 2008

Method of manufacturing integrated circuit device including recessed channel transistor

SAMSUNG ELECTRONICS CO LTD10 citations82
US7531414B2May 12, 2009

Method of manufacturing integrated circuit device including recessed channel transistor

SAMSUNG ELECTRONICS CO LTD4 citations61
US7358126B2Apr 15, 2008

Dual damascene structure and methods of forming the same

SAMSUNG ELECTRONICS CO LTD3 citations61
US8003487B2Aug 23, 2011

Methods of manufacturing a semiconductor device using a layer suspended across a trench

SAMSUNG ELECTRONICS CO LTD4 citations58
US8039345B2Oct 18, 2011

Methods of forming semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations39