Inventor

SEO SUN-AE

KR85 patents

⚠️ This page may combine multiple inventors who share the name “SEO SUN-AE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SEO SUN-AE

SAMSUNG ELECTRONICS CO LTD

Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same

Memory device using multi-layer with a graded resistance change

Complementary nonvolatile memory device

Method of manufacturing memory with nano dots

Graphene electronic device and method of fabricating the same

Nonvolatile memory device including nano dot and method of fabricating the same

Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same

Information storage devices and methods of operating the same

Multi-state resistive memory element, multi-bit resistive memory cell, operating method thereof, and data processing system using the memory element

Method for manufacturing electronic device using thin film transistor with protective cap over flexible substrate

Magnetic track using magnetic domain wall movement and information storage device including the same

Nonvolatile memory device and method of manufacturing the same

Nonvolatile memory device having two or more resistance elements and methods of forming and using the same

Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the multi-bit non-volatile memory device

Non-volatile logic circuits, integrated circuits including the non-volatile logic circuits, and methods of operating the integrated circuits

Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the multi-bit non-volatile memory device

Thin film transistor with protective cap over flexible substrate, electronic device using the same, and manufacturing method thereof

Memory device using a transistor and one resistant element for storage

Resistive random access memory having a solid solution layer and method of manufacturing the same

Graphene electronic device and method of fabricating the same

Graphene electronic device and method of fabricating the same

Quantum interference transistors and methods of manufacturing and operating the same

Information storage devices using magnetic domain wall movement and methods of manufacturing the same

Nonvolatile memory device and method including resistor and transistor

LEE SUNG-CHUL

Oscillators and methods of manufacturing and operating the same

Oscillators and methods of operating the same

Tracks including magnetic layer and magnetic memory devices comprising the same

Semiconductor device using magnetic domain wall movement

Magnetic structures, information storage devices including magnetic structures, methods of manufacturing and methods of operating the same

KIM KWANG-SEOK

Magnetic tunnel junction devices, electronic devices including a magnetic tunneling junction device and methods of fabricating the same

Oscillators and methods of operating the same

Method of operating magnetic random access memory device

WOO YUN-SUNG

Electronic device using a two-dimensional sheet material, transparent display and methods of fabricating the same

Stack structure comprising epitaxial graphene, method of forming the stack structure, and electronic device comprising the stack structure

Methods of fabricating graphene using alloy catalyst

CHUNG HYUN-JONG

Field effect transistor, logic circuit including the same and methods of manufacturing the same

Graphene electronic device including a plurality of graphene channel layers

Graphene electronic device and method of fabricating the same

SEO SUN-AE

Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the same

Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the same

Resistive random access memory and method of manufacturing the same

HEO JIN-SEONG

Graphene device and method of manufacturing the same

Graphene electronic device and method of fabricating the same

CHO YOUNG-JIN

Information storage devices using magnetic domain wall movement and methods of operating the same

LEE SUNG-HOON

Graphene substituted with boron and nitrogen, method of fabricating the same, and transistor having the same

HEO JIN SEONG

Graphene device and method of manufacturing the same

SEO DAVID

Field effect transistors, methods of fabricating a carbon-insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistor

SONG HYUN-JAE

Graphene electronic devices having multi-layered gate insulating layer

HWANG IN-JUN

Magnetic random access memory devices, methods of driving the same and data writing and reading methods for the same

KIM HO-JUNG

Information storage devices including vertical nano wires