Inventor
OHUCHI KAZUYA
JP20 patents
Patents
20 patentsUS6525403B2Feb 25, 2003
Semiconductor device having MIS field effect transistors or three-dimensional structure
TOSHIBA KK482 citations99
US5463234AOct 31, 1995
High-speed semiconductor gain memory cell with minimal area occupancy
TOSHIBA KK98 citations95
US6878579B2Apr 12, 2005
Semiconductor device and method of manufacturing the same
TOSHIBA KK24 citations92
US6744104B1Jun 1, 2004
Semiconductor integrated circuit including insulated gate field effect transistor and method of manufacturing the same
TOSHIBA KK42 citations92
US6642585B2Nov 4, 2003
Semiconductor device having gate electrode of stacked structure including polysilicon layer and metal layer and method of manufacturing the same
TOSHIBA KK19 citations92
US6498374B1Dec 24, 2002
MOS semiconductor device having gate insulating film containing nitrogen
TOSHIBA KK21 citations92
US5734181AMar 31, 1998
Semiconductor device and manufacturing method therefor
TOSHIBA KK53 citations92
US7456096B2Nov 25, 2008
Method of manufacturing silicide layer for semiconductor device
TOSHIBA KK8 citations74
US7141467B2Nov 28, 2006
Semiconductor device having metal silicide films formed on source and drain regions and method for manufacturing the same
TOSHIBA KK9 citations74
US6891232B2May 10, 2005
Semiconductor device having an injection substance to knock against oxygen and manufacturing method of the same
TOSHIBA KK11 citations74
US6841429B2Jan 11, 2005
Method of manufacturing a semiconductor device having a silicide film
TOSHIBA KK10 citations74
US5917223AJun 29, 1999
Semiconductor device having salicide layer
TOSHIBA KK12 citations74
US6897534B2May 24, 2005
Semiconductor device having gate electrode of stacked structure including polysilicon layer and metal layer and method of manufacturing the same
TOSHIBA KK6 citations73
US7902612B2Mar 8, 2011
Semiconductor device and method of manufacturing the same
TOSHIBA KK2 citations63
US7875976B2Jan 25, 2011
Semiconductor device including a silicide layer and a dielectric layer
TOSHIBA KK2 citations63
US7183168B2Feb 27, 2007
Method of manufacturing a semiconductor device having a silicide film
TOSHIBA KK2 citations63
US6677660B1Jan 13, 2004
Semiconductor device having silicide film
TOSHIBA KK1 citations63
US6791106B2Sep 14, 2004
Semiconductor device and method of manufacturing the same
TOSHIBA KK5 citations62
US6762468B2Jul 13, 2004
Semiconductor device and method of manufacturing the same
TOSHIBA KK4 citations62
US7148096B2Dec 12, 2006
Method of manufacturing a semiconductor device having a gate electrode containing polycrystalline silicon-germanium
TOSHIBA KK1 citations52