Inventor
SU CHUN-LIEN
TW34 patents
⚠️ This page may combine multiple inventors who share the name “SU CHUN-LIEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MACRONIX INT CO LTD
32 patentsUS6363013B1Mar 26, 2002
Auto-stopped page soft-programming method with voltage limited component
MACRONIX INT CO LTD68 citations95
US6812149B1Nov 2, 2004
Method of forming junction isolation to isolate active elements
MACRONIX INT CO LTD13 citations84
US10936234B2Mar 2, 2021
Data transfer between memory devices on shared bus
MACRONIX INT CO LTD4 citations73
US6620714B2Sep 16, 2003
Method for reducing oxidation encroachment of stacked gate layer
MACRONIX INT CO LTD9 citations73
US6569735B2May 27, 2003
Manufacturing method for isolation on non-volatile memory
MACRONIX INT CO LTD11 citations73
US12086615B2Sep 10, 2024
Serial NAND flash with XIP capability
MACRONIX INT CO LTD0 citations62
US11734181B2Aug 22, 2023
Continuous read with multiple read commands
MACRONIX INT CO LTD0 citations62
US11640308B2May 2, 2023
Serial NAND flash with XiP capability
MACRONIX INT CO LTD0 citations62
US11500775B2Nov 15, 2022
File system management in memory device
MACRONIX INT CO LTD0 citations62
US11487908B2Nov 1, 2022
Secure memory
MACRONIX INT CO LTD0 citations62
US11468963B2Oct 11, 2022
Memory device and read method thereof
MACRONIX INT CO LTD1 citations62
US11455254B2Sep 27, 2022
Flash memory system and flash memory device thereof
MACRONIX INT CO LTD0 citations62
US11249913B2Feb 15, 2022
Continuous read with multiple read commands
MACRONIX INT CO LTD1 citations62
US11145376B1Oct 12, 2021
Memory system and method capable of performing wear leveling
MACRONIX INT CO LTD0 citations62
US11087858B1Aug 10, 2021
In-place refresh operation in flash memory
MACRONIX INT CO LTD1 citations62
US11074975B1Jul 27, 2021
Non-volatile register and implementation of non-volatile register
MACRONIX INT CO LTD0 citations62
US7199007B2Apr 3, 2007
Non-volatile memory device having a nitride barrier to reduce the fast erase effect
MACRONIX INT CO LTD4 citations62
US6521518B1Feb 18, 2003
Method of eliminating weakness caused by high density plasma dielectric layer
MACRONIX INT CO LTD4 citations62
US6723646B2Apr 20, 2004
Method for controlling and monitoring a chemical mechanical polishing process
MACRONIX INT CO LTD6 citations60
US6552360B1Apr 22, 2003
Method and circuit layout for reducing post chemical mechanical polishing defect count
MACRONIX INT CO LTD2 citations60
US12566694B2Mar 3, 2026
Managing logic units of memory devices
MACRONIX INT CO LTD0 citations56
US11861012B2Jan 2, 2024
Memory device having safety boot capability
MACRONIX INT CO LTD0 citations52
US11182302B2Nov 23, 2021
Memory device, electronic device, and associated read method
MACRONIX INT CO LTD0 citations52
US6677211B2Jan 13, 2004
Method for eliminating polysilicon residue
MACRONIX INT CO LTD1 citations52
US12518838B2Jan 6, 2026
Managing power supply in semiconductor devices
MACRONIX INT CO LTD0 citations51
US7400011B2Jul 15, 2008
Non-volatile memory device having a nitride barrier to reduce the fast erase effect
MACRONIX INT CO LTD0 citations51
US6680256B2Jan 20, 2004
Process for planarization of flash memory cell
MACRONIX INT CO LTD0 citations51
US8859364B2Oct 14, 2014
Manufacturing method of non-volatile memory
MACRONIX INT CO LTD0 citations49
US7592036B2Sep 22, 2009
Method for manufacturing NAND flash memory
MACRONIX INT CO LTD1 citations47
US12112165B2Oct 8, 2024
Managing status information of logic units
MACRONIX INT CO LTD0 citations45
US11209985B2Dec 28, 2021
Input/output delay optimization method, electronic system and memory device using the same
MACRONIX INT CO LTD0 citations42
US10217754B2Feb 26, 2019
Semiconductor device and method of fabricating the same
MACRONIX INT CO LTD0 citations37