Inventor · disambiguated record
Myung Jin Kang
Also filed as: KANG MYUNG-JIN
11 granted patents·4 pending applications·27 citations·filing 2008–2016
85Inventor score
Top patents by PatentIndex Score
15 records- 0185US8598010B2Methods of forming variable-resistance memory devices and devices formed therebyJOO HEUNG JIN·Filed 2011·Granted Dec 3, 2013·10 cites·17 claims
- 0275US8824187B2Phase change memory devices and methods of manufacturing the samePARK TAE-JIN·Filed 2012·Granted Sep 2, 2014·5 cites·20 claims
- 0375US8039829B2Contact structure, a semiconductor device employing the same, and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 18, 2011·6 cites·13 claims
- 0472US9515150B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Dec 6, 2016·3 cites·6 claims
- 0556US8133757B2Method of manufacturing a phase changeable memory unit having an enhanced structure to reduce a reset currentKWON HYUN-SUK·Filed 2009·Granted Mar 13, 2012·2 cites·9 claims
- 0655US8237141B2Non-volatile memory device including phase-change materialKANG MYUNG-JIN·Filed 2010·Granted Aug 7, 2012·1 cites·10 claims
- 0753US9034719B2Methods of forming variable resistive memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted May 19, 2015·0 cites·4 claims
- 0850US8765521B2Variable resistance memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 1, 2014·0 cites·11 claims
- 0950US8765564B2Methods of forming variable resistive memory devicesKANG MYUNG JIN·Filed 2012·Granted Jul 1, 2014·0 cites·16 claims
- 1046US10439033B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 8, 2019·0 cites·20 claims
- 1145US8653493B2Variable resistance memory devices and methods of manufacturing the sameKANG MYUNG JIN·Filed 2012·Granted Feb 18, 2014·0 cites·19 claims
- 1245US2009035514A1Phase change memory device and method of fabricating the sameKANG MYUNG-JIN·Filed 2008·Application pending·0 cites
- 1339US2011031461A1Phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 1436US2009057644A1Phase-change memory units, methods of forming the phase-change memory units, phase-change memory devices having the phase-change memory units and methods of manufacturung the phase-change memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 1536US2009250682A1Phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
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