Inventor

FUJIOKA YASUSHI

JP59 patents

⚠️ This page may combine multiple inventors who share the name “FUJIOKA YASUSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FUJIOKA YASUSHI

CANON KK

Semiconductor device having a semiconductor region in which a band gap being continuously graded

Photovoltaic element and fabrication process thereof

Photovoltaic elements and process and apparatus for their formation

Substrate having an uneven surface for solar cell and a solar cell provided with said substrate

Continuous forming method for functional deposited films and deposition apparatus

Process for continuously forming a large area functional deposited film by a microwave PCVD method and an apparatus suitable for practicing the same

Method and apparatus for continuously forming functional deposited films with a large area by a microwave plasma CVD method

Process for continuously forming a large area functional deposited film by microwave PCVD method and apparatus suitable for practicing the same

Method for forming a photoelectric deposited film

Glow discharge apparatus for continuously manufacturing semiconductor device comprising gas gates with slotted rollers

Method for continuously forming functional deposited films with a large area by a microwave plasma cvd method

Film deposition apparatus

Continuously film-forming apparatus provided with improved gas gate means

Apparatus for forming a deposited film

Continuous film-forming process using microwave energy in a moving substrate web functioning as a substrate and plasma generating space

Microwave pcvd method for continuously forming a large area functional deposited film using a curved moving substrate web with microwave energy with a directivity in one direction perpendicular to the direction of microwave propagation

Functional ZnSe1-x Tex :H deposited film

Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least ZN, SE and H in an amount of 1 to 4 atomic %

Pin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, H in an amount of 1 to 4 atomic % and a dopant and I-type semiconductor layer comprising non-single crystal Si(H,F) material

Pin junction photovoltaic element having I-type semiconductor layer comprising non-single crystal material containing at least Zn, Se and H in an amount of 1 to 4 atomic %

Functional ZnSe:H deposited films

Light receiving member for use in electrophotography having an amorphous silicon layer

Plasma processing apparatus and plasma processing method

Deposition of semiconductor layer by plasma process

Process for manufacturing semiconductor element using non-monocrystalline semiconductor layers of first and second conductivity types and amorphous and microcrystalline I-type semiconductor layers

Photovoltaic element

Method and device for forming semiconductor thin film, and method and device for forming photovoltaic element

Photovoltaic device

Solar cell

Process for producing a semiconductor device

PIN junction photovoltaic element containing Zn, Se, Te, H in an amount of 1 to 4 atomic %

Fabrication of photovoltaic cell by plasma process

Method of manufacturing photovoltaic element and apparatus therefor

Method of producing a photovoltaic device using a sputtering method

Method of generating a reciprocating plurality of magnetic fluxes on a target

Continuous forming method for functional deposited films

Pin amorphous silicon photovoltaic element with counter-doped intermediate layer

Method for continuously manufacturing a semiconductor device

Electrophotographic light receiving member having polycrystalline silicon charge injection inhibition layer prepared by chemical reaction of excited precursors and A-SI:C:H surface layer

Semiconductor device having a semiconductor region in which either the conduction or valence band remains flat while bandgap is continuously graded

Light receiving member for use in electrophotography with a surface layer comprising non-single-crystal material containing tetrahedrally bonded boron nitride

Layered amorphous silicon containing photoconductive element having surface layer with specified optical band gap

Apparatus and method for forming a deposited film on a substrate

Light receiving member for use in electrophotography and process for the production thereof

Light receiving member for use in electrophotography

SHARP KK

Thin film solar battery module

Thin-film solar cell module

Thin film formation apparatus including engagement members for support during thermal expansion

Plasma CVD apparatus, and method for forming film and method for forming semiconductor device using the same

FUJITSU LTD

Relay and exchange system for time division multiplex data