Inventor

ZAKA ALBAN

DE29 patents

⚠️ This page may combine multiple inventors who share the name “ZAKA ALBAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ZAKA ALBAN

GLOBALFOUNDRIES INC

Method of forming a semiconductor device and resulting semiconductor devices

Resistor structure with high resistance based on very thin semiconductor layer

High-voltage devices integrated on semiconductor-on-insulator substrate

Methods for fabricating integrated circuits with improved implantation processes

Complex semiconductor devices of the SOI type

MOS capacitive structure of reduced capacitance variability

Performance enhancement in transistors by providing a graded embedded strain-inducing semiconductor region with adapted angles with respect to the substrate surface

Method of forming a semiconductor device structure employing fluorine doping and according semiconductor device structure

Capacitive structure in a semiconductor device having reduced capacitance variability

Method of forming a semiconductor device

Transistor element with reduced lateral electrical field

Methods for fabricating integrated circuits with improved implantation processes

Method for a uniform compressive strain layer and device thereof

Semiconductor structure including a nonvolatile memory cell and method for the formation thereof

Integrated circuits with shallow trench isolations, and methods for producing the same

Semiconductor device and method

Thin body field effect transistor including a counter-doped channel area and a method of forming the same

Low thermal budget schemes in semiconductor device fabrication

Fully depleted silicon on insulator (FDSOI) lateral double-diffused metal oxide semiconductor (LDMOS) for high frequency applications

Laterally double diffused metal oxide semiconductor (LDMOS) device on fully depleted silicon on insulator (FDSOI) enabling high input voltage

Method of forming a semiconductor device with STI structures on an SOI substrate

Buried-channel low noise transistors and methods of making such devices

GLOBALFOUNDRIES US INC

Structure including transistor using buried insulator layer as gate dielectric and trench isolations in source and drain

Asymmetric FET for FDSOI devices

Asymmetric FET for FDSOI devices

Silicon-controlled rectifiers with a segmented floating region

GLOBALFOUNDRIES DRESDEN MOD 1

Charge-trapping sidewall spacer-type non-volatile memory device and method

High-voltage devices integrated on semiconductor-on-insulator substrate

Floating-gate devices in high voltage applications