Inventor

BEAM III EDWARD A

US25 patents

⚠️ This page may combine multiple inventors who share the name “BEAM III EDWARD A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BEAM III EDWARD A

QORVO US INC

High electron mobility transistor (HEMT) device

High electron mobility transistor (HEMT) device

Field-effect transistor

Double heterojunction field effect transistor with polarization compensated layer

High electron mobility transistor (HEMT) device and method of making the same

Continuous crystalline gallium nitride (GaN) PN structure with no internal regrowth interfaces

Semiconductor device with high thermal conductivity substrate and process for making the same

Semiconductor device with high thermal conductivity substrate and process for making the same

Field-effect transistor

TRIQUINT SEMICONDUCTOR INC

Gallium nitride on high thermal conductivity material device and method

Heterostructure field effect transistor

Digital alloy layer in a III-nitrade based heterojunction field effect transistor

Doped gallium nitride high-electron mobility transistor

Long wavelength laser diodes on metamorphic buffer modified gallium arsenide wafers

Group III-nitride-based transistor with gate dielectric including a fluoride -or chloride- based compound

Increased responsivity photodetector

TEXAS INSTRUMENTS INC

Method of forming a piezoelectric layer with improved texture

Method for patterned heteroepitaxial growth

Integrated field effect transistor and resonant tunneling diode

Method of making an integrated field effect transistor and resonant tunneling diode

Flow controller

Forming a piezoelectric layer with improved texture

Method of fabrication of devices with different operating characteristics through a single selective epitaxial growth process

SAUNIER PAUL A

Group III-nitride transistor using a regrown structure

BEAM III EDWARD A

Regrown Schottky structures for GAN HEMT devices