Inventor

LAI FEI-LUNG

TW41 patents

⚠️ This page may combine multiple inventors who share the name “LAI FEI-LUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LAI FEI-LUNG

TAIWAN SEMICONDUCTOR MFG CO LTD

Amplified dual-gate bio field effect transistor

Semiconductor structure and manufacturing method thereof

Backside CMOS compatible BioFET with no plasma induced damage

Gas sensor, integrated circuit device using the same, and manufacturing method thereof

Top-down fabrication method for forming a nanowire transistor device

Backside sensing BioFET with enhanced performance

Method of stiction prevention by patterned anti-stiction layer

Manufacturing method of semiconductor structure including heater

Method of using integrated electro-microfluidic probe card

Amplified dual-gate bio field effect transistor

Integrated biosensor

Biosensor with a sensing surface on an interlayer dielectric

MEMS device with dummy-area utilization for pressure enhancement

Method of using integrated electro-microfluidic probe card

MEMS device with dummy-area utilization for pressure enhancement

Fluid deposition apparatus and method

Integrated electro-microfluidic probe card, system and method for using the same

BioFET device having a metal crown structure as a sensing layer disposed on an oxide layer formed under a channel region of a transistor

Microelectromechanical systems device having a mechanically robust anti-stiction/outgassing structure

Microelectromechanical systems device having a mechanically robust anti-stiction/outgassing structure

MEMS apparatus with anti-stiction layer

Semiconductor manufacturing method and structure thereof

CMOS-MEMS structure and method of forming the same

Backside CMOS compatible BioFET with no plasma induced damage

Microelectromechanical systems device having a mechanically robust anti-stiction/outgassing structure

Semiconductor structure and manufacturing method thereof

Bypass structure

Bypass structure

Method of fabricating a biological field-effect transistor (BioFET) with increased sensing area

Method of stiction prevention by patterned anti-stiction layer

CMOS-MEMS structure and method of forming the same

Backside CMOS compatible BioFET with no plasma induced damage

Fluid deposition appartus and method

CMOS-MEMS structure and method of forming the same

Semiconductor sensing structure

Backside sensing BioFET with enhanced performance

Bypass structure

TAIWAN SEMICONDUCTOR MFG

Backside CMOS compatible bioFET with no plasma induced damage

Backside CMOS compatible BioFET with no plasma induced damage

Backside sensing bioFET with enhanced performance

KALNITSKY ALEXANDER

Light detector with Ge film