Inventor
YANG YINXIAO
US4 patents
Patents
4 patentsUS10396078B2Aug 27, 2019
Integrated circuit structure including laterally recessed source/drain epitaxial region and method of forming same
GLOBALFOUNDRIES INC9 citations82
US10020307B1Jul 10, 2018
Integrated circuit structure including laterally recessed source/drain epitaxial region and method of forming same
GLOBALFOUNDRIES INC9 citations82
US9634084B1Apr 25, 2017
Conformal buffer layer in source and drain regions of fin-type transistors
GLOBALFOUNDRIES INC12 citations81
US9536985B2Jan 3, 2017
Epitaxial growth of material on source/drain regions of FinFET structure
GLOBALFOUNDRIES INC2 citations72