Inventor
BRANDT PHILIP CHRISTOPH
DE13 patents
⚠️ This page may combine multiple inventors who share the name “BRANDT PHILIP CHRISTOPH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
12 patentsUS11133380B2Sep 28, 2021
Diode structure of a power semiconductor device
INFINEON TECHNOLOGIES AG2 citations72
US11094779B2Aug 17, 2021
Semiconductor device having an edge termination region comprising a first edge termination region of a second conductivity type adjacent to a second edge termination region of a first conductivity type
INFINEON TECHNOLOGIES AG2 citations72
US10651165B2May 12, 2020
Semiconductor device having overload current carrying capability
INFINEON TECHNOLOGIES AG2 citations72
US11848354B2Dec 19, 2023
Diode structure of a power semiconductor device
INFINEON TECHNOLOGIES AG0 citations62
US11721689B2Aug 8, 2023
Semiconductor device having a semiconductor channel region and a semiconductor auxiliary region
INFINEON TECHNOLOGIES AG0 citations62
US11410989B2Aug 9, 2022
Semiconductor device having overload current carrying capability
INFINEON TECHNOLOGIES AG0 citations62
US11251266B2Feb 15, 2022
Power semiconductor device and method of processing a power semiconductor device
INFINEON TECHNOLOGIES AG0 citations51
US10475911B2Nov 12, 2019
Semiconductor device having a source region with chalcogen atoms
INFINEON TECHNOLOGIES AG0 citations51
US10340337B2Jul 2, 2019
Diode structure of a power semiconductor device
INFINEON TECHNOLOGIES AG0 citations51
US10205011B2Feb 12, 2019
Method for forming a semiconductor device with implanted chalcogen atoms
INFINEON TECHNOLOGIES AG0 citations51
US10998399B2May 4, 2021
Power semiconductor device
INFINEON TECHNOLOGIES AG0 citations49
US9954068B2Apr 24, 2018
Method of forming a transistor, method of patterning a substrate, and transistor
INFINEON TECHNOLOGIES AG0 citations40