Inventor

OH KWANG-HOON

KR9 patents

⚠️ This page may combine multiple inventors who share the name “OH KWANG-HOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

3 patents

US5861638AJan 19, 1999

Insulated gate bipolar transistor

SAMSUNG ELECTRONICS CO LTD10 citations71

US5728593AMar 17, 1998

Power insulated-gate transistor having three terminals and a manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD14 citations71

US5844258ADec 1, 1998

Emitter switched thyristor

SAMSUNG ELECTRONICS CO LTD2 citations60

TEXAS INSTRUMENTS INC

2 patents

US6833568B2Dec 21, 2004

Geometry-controllable design blocks of MOS transistors for improved ESD protection

TEXAS INSTRUMENTS INC12 citations73

US6781204B1Aug 24, 2004

Spreading the power dissipation in MOS transistors for improved ESD protection

TEXAS INSTRUMENTS INC2 citations62

TRINNO TECH CO LTD

2 patents

US12501636B2Dec 16, 2025

Power semiconductor device capable of controlling slope of current and voltage during dynamic switching

TRINNO TECH CO LTD0 citations55

US12087848B2Sep 10, 2024

Power semiconductor device with reduced loss and manufacturing method the same

TRINNO TECH CO LTD0 citations44

FAIRCHILD KR SEMICONDUCTOR LTD

1 patent

US7645659B2Jan 12, 2010

Power semiconductor device using silicon substrate as field stop layer and method of manufacturing the same

FAIRCHILD KR SEMICONDUCTOR LTD17 citations80

OH KWANG-HOON

1 patent

US8269304B2Sep 18, 2012

MOS gate power semiconductor device with anode of protection diode connected to collector electrode

OH KWANG-HOON2 citations52