Inventor
MARKOV VIKTOR
US14 patents
⚠️ This page may combine multiple inventors who share the name “MARKOV VIKTOR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SILICON STORAGE TECH INC
12 patentsUS7868375B2Jan 11, 2011
Split gate non-volatile flash memory cell having a floating gate, control gate, select gate and an erase gate with an overhang over the floating gate, array and method of manufacturing
SILICON STORAGE TECH INC230 citations98
US7927994B1Apr 19, 2011
Split gate non-volatile flash memory cell having a floating gate, control gate, select gate and an erase gate with an overhang over the floating gate, array and method of manufacturing
SILICON STORAGE TECH INC73 citations97
US11205490B2Dec 21, 2021
Method of improving read current stability in analog non-volatile memory cells by screening memory cells
SILICON STORAGE TECH INC2 citations72
US10838652B2Nov 17, 2020
Programming of memory cell having gate capacitively coupled to floating gate
SILICON STORAGE TECH INC3 citations72
US10079061B2Sep 18, 2018
System and method for programming split-gate, non-volatile memory cells
SILICON STORAGE TECH INC3 citations68
US12014793B2Jun 18, 2024
Method of screening non-volatile memory cells
SILICON STORAGE TECH INC0 citations62
US11769558B2Sep 26, 2023
Method of reducing random telegraph noise in non-volatile memory by grouping and screening memory cells
SILICON STORAGE TECH INC0 citations62
US11309042B2Apr 19, 2022
Method of improving read current stability in analog non-volatile memory by program adjustment for memory cells exhibiting random telegraph noise
SILICON STORAGE TECH INC1 citations62
US11017866B2May 25, 2021
Method of improving read current stability in analog non-volatile memory using final bake in predetermined program state
SILICON STORAGE TECH INC0 citations62
US10991433B2Apr 27, 2021
Method of improving read current stability in analog non-volatile memory by limiting time gap between erase and program
SILICON STORAGE TECH INC0 citations62
US12554423B2Feb 17, 2026
Accelerated programming of four gate, split-gate flash memory cells
SILICON STORAGE TECH INC0 citations61
US12080355B2Sep 3, 2024
Method of improving read current stability in analog non-volatile memory by post-program tuning for memory cells exhibiting random telegraph noise
SILICON STORAGE TECH INC0 citations51