Inventor · disambiguated record
Wataru Wakamiya
Also filed as: WAKAMIYA WATARU
22 granted patents·637 citations·filing 1980–1994
97Inventor score
Top patents by PatentIndex Score
22 records- 0191US4994893AField effect transistor substantially coplanar surface structureMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Feb 19, 1991·62 cites·12 claims
- 0286US5047817AStacked capacitor for semiconductor memory deviceMITSUBISHI DENKI KABUSHIKI KAS·Filed 1989·Granted Sep 10, 1991·42 cites·14 claims
- 0383US5290729AStacked type capacitor having a dielectric film formed on a rough surface of an electrode and method of manufacturing thereofMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Mar 1, 1994·85 cites·24 claims
- 0481US5084752ASemiconductor device having bonding pad comprising buffer layerMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Jan 28, 1992·59 cites·19 claims
- 0580US5177571ALdd mosfet with particularly shaped gate electrode immune to hot electron effectMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Jan 5, 1993·37 cites·4 claims
- 0679US5101251ASemiconductor memory device with improved stacked capacitor structureMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Mar 31, 1992·38 cites·11 claims
- 0776US5225704AField shield isolation structure for semiconductor memory device and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Jul 6, 1993·37 cites·19 claims
- 0874US5164803ACmos semiconductor device with an element isolating field shieldMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Nov 17, 1992·36 cites·4 claims
- 0967US4984055ASemiconductor device having a plurality of conductive layers and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Jan 8, 1991·33 cites·12 claims
- 1066US5521419ASemiconductor device having field shield element isolating structure and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1994·Granted May 28, 1996·36 cites·10 claims
- 1165US5094965AField effect transistor having substantially coplanar surface structure and a manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Mar 10, 1992·21 cites·8 claims
- 1263US5288661ASemiconductor device having bonding pad comprising buffer layerMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Feb 22, 1994·28 cites·4 claims
- 1357US5930614AMethod for forming MOS device having field shield isolationMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jul 27, 1999·22 cites·4 claims
- 1455US5067000ASemiconductor device having field shield isolationMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Nov 19, 1991·17 cites·13 claims
- 1553US5459344AStacked capacitor type semiconductor memory device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Oct 17, 1995·12 cites·5 claims
- 1651US4381595AProcess for preparing multilayer interconnectionMITSUBISHI ELECTRIC CORP·Filed 1980·Granted May 3, 1983·16 cites·2 claims
- 1746US5097310AComplementary semiconductor device having improved device isolating regionMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Mar 17, 1992·10 cites·10 claims
- 1846US4998161ALDD MOS device having an element separation region having an electrostatic screening electrodeMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Mar 5, 1991·10 cites·20 claims
- 1943US5181094AComplementary semiconductor device having improved device isolating regionMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jan 19, 1993·9 cites·25 claims
- 2043US4956692ASemiconductor device having an isolation oxide filmMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Sep 11, 1990·11 cites·4 claims
- 2142US5278437AStacked capacitor type semiconductor memory device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jan 11, 1994·7 cites·3 claims
- 2241US5180683AMethod of manufacturing stacked capacitor type semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jan 19, 1993·9 cites·6 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →