Inventor · disambiguated record
Jueinai Kwo
Also filed as: KWO JUEINAI · KWO JUEINAI R · KWO JUEINAI RAYNIEN
16 granted patents·315 citations·filing 1993–2020
93Inventor score
Files withLUCENT TECHNOLOGIES INC4TAIWAN SEMICONDUCTOR MFG CO LTD4AGERE SYST GUARDIAN CORP3AGERE SYSTEMS INC2AT & T CORP2
Top patents by PatentIndex Score
16 records- 0193US6404027B1High dielectric constant gate oxides for silicon-based devicesAGERE SYST GUARDIAN CORP·Filed 2000·Granted Jun 11, 2002·87 cites·15 claims
- 0276US5962883AArticle comprising an oxide layer on a GaAs-based semiconductor bodyLUCENT TECHNOLOGIES INC·Filed 1998·Granted Oct 5, 1999·38 cites·9 claims
- 0375US5821171AArticle comprising a gallium layer on a GaAs-based semiconductor, and method of making the articleLUCENT TECHNOLOGIES INC·Filed 1995·Granted Oct 13, 1998·56 cites·8 claims
- 0461US11615955B2Material having single crystal perovskite, device including the same, and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 28, 2023·0 cites·20 claims
- 0559US5523587AMethod for low temperature growth of epitaxial silicon and devices produced therebyAT & T CORP·Filed 1993·Granted Jun 4, 1996·28 cites·7 claims
- 0658US6469357B1Article comprising an oxide layer on a GaAs or GaN-based semiconductor bodyAGERE SYST GUARDIAN CORP·Filed 1998·Granted Oct 22, 2002·23 cites·5 claims
- 0757US11081339B2Single-crystal rare earth oxide grown on III-V compoundTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 3, 2021·0 cites·20 claims
- 0857US6271069B1Method of making an article comprising an oxide layer on a GaAs-based semiconductor bodyAGERE SYST GUARDIAN CORP·Filed 1998·Granted Aug 7, 2001·18 cites·17 claims
- 0953US5948216AMethod for making thin film tantalum oxide layers with enhanced dielectric properties and capacitors employing such layersLUCENT TECHNOLOGIES INC·Filed 1996·Granted Sep 7, 1999·17 cites·19 claims
- 1053US5473456AMethod for growing transparent conductive gallium-indium-oxide films by sputteringAT & T CORP·Filed 1993·Granted Dec 5, 1995·15 cites·9 claims
- 1150US5628933ATransparent conductors comprising zinc-indium-oxide and methods for making filmsLUCENT TECHNOLOGIES INC·Filed 1996·Granted May 13, 1997·16 cites·11 claims
- 1249US10755924B2Material having single crystal perovskite, device including the same, and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 25, 2020·0 cites·18 claims
- 1349US10283349B2Single-crystal rare earth oxide grown on III-V compoundTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 7, 2019·0 cites·20 claims
- 1449US6480633B1Electro-optic device including a buffer layer of transparent conductive materialAGERE SYSTEMS INC·Filed 1999·Granted Nov 12, 2002·16 cites·1 claims
- 1545US7235467B2Method for forming a semiconductor device having a structure of a single crystal scandium oxide film formed on a silicon substrateUNIV TSINGHUA·Filed 2006·Granted Jun 26, 2007·0 cites·10 claims
- 1630US6495407B1Method of making an article comprising an oxide layer on a GaAs-based semiconductor bodyAGERE SYSTEMS INC·Filed 1998·Granted Dec 17, 2002·1 cites·11 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →