Inventor

SONG WON-HYUNG

KR26 patents

⚠️ This page may combine multiple inventors who share the name “SONG WON-HYUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SONG WON-HYUNG

SAMSUNG ELECTRONICS CO LTD

DRAM assist error correction mechanism for DDR SDRAM interface

DRAM assist error correction mechanism for DDR SDRAM interface

Method to deliver in-DRAM ECC information through DDR bus

Memory module

DRAM assist error correction mechanism for DDR SDRAM interface

DRAM assist error correction mechanism for DDR SDRAM interface

Method to deliver in-DRAM ECC information through DDR bus

Method to deliver in-DRAM ECC information through DDR bus

Semiconductor memory device having rank interleaving operation in memory module

Memory module

DRAM assist error correction mechanism for DDR SDRAM interface

Memory package including buffer, expansion memory module, and multi-module memory system

Memory package including buffer, expansion memory module, and multi-module memory system

Memory module and memory system

Memory module and memory system

Memory module and memory system

Compensating for concentrated activation of memory cells in a semiconductor memory device

Integrated circuit memory devices with customizable standard cell logic

Integrated circuit memory devices with customizable standard cell logic

Memory device with error check function of memory cell array and memory module including the same

Memory address remapping system, device and method of performing address remapping operation

Memory device and memory system

Memory module and memory system comprising same

SONG WON-HYUNG

Memory module including parallel test apparatus

Semiconductor module, test system and method employing the same

Test board having a plurality of test modules and a test system having the same