P

Inventor

SUNG HUNG-CHENG

TW100 patents

Patents

50 patents
US5441907AAug 15, 1995

Process for manufacturing a plug-diode mask ROM

TAIWAN SEMICONDUCTOR MFG162 citations99
US5595927AJan 21, 1997

Method for making self-aligned source/drain mask ROM memory cell using trench etched channel

TAIWAN SEMICONDUCTOR MFG157 citations97
US6380583B1Apr 30, 2002

Method to increase coupling ratio of source to floating gate in split-gate flash

TAIWAN SEMICONDUCTOR MFG46 citations96
US6228695B1May 8, 2001

Method to fabricate split-gate with self-aligned source and self-aligned floating gate to control gate

TAIWAN SEMICONDUCTOR MFG76 citations96
US6159801ADec 12, 2000

Method to increase coupling ratio of source to floating gate in split-gate flash

TAIWAN SEMICONDUCTOR MFG84 citations96
US6117733ASep 12, 2000

Poly tip formation and self-align source process for split-gate flash cell

TAIWAN SEMICONDUCTOR MFG85 citations96
US5962903AOct 5, 1999

Planarized plug-diode mask ROM structure

TAIWAN SEMICONDUCTOR MFG72 citations96
US5631179AMay 20, 1997

Method of manufacturing metallic source line, self-aligned contact for flash memory devices

TAIWAN SEMICONDUCTOR MFG86 citations96
US5589413ADec 31, 1996

Method of manufacturing self-aligned bit-line during EPROM fabrication

TAIWAN SEMICONDUCTOR MFG49 citations96
US6204126B1Mar 20, 2001

Method to fabricate a new structure with multi-self-aligned for split-gate flash

TAIWAN SEMICONDUCTOR MFG56 citations95
US6559501B2May 6, 2003

Method for forming split-gate flash cell for salicide and self-align contact

TAIWAN SEMICONDUCTOR MFG16 citations93
US6441429B1Aug 27, 2002

Split-gate flash memory device having floating gate electrode with sharp peak

TAIWAN SEMICONDUCTOR MFG24 citations93
US6417049B1Jul 9, 2002

Split gate flash cell for multiple storage

TAIWAN SEMICONDUCTOR MFG28 citations93
US6380035B1Apr 30, 2002

Poly tip formation and self-align source process for split-gate flash cell

TAIWAN SEMICONDUCTOR MFG19 citations93
US6355527B1Mar 12, 2002

Method to increase coupling ratio of source to floating gate in split-gate flash

TAIWAN SEMICONDUCTOR MFG28 citations93
US6284596B1Sep 4, 2001

Method of forming split-gate flash cell for salicide and self-align contact

TAIWAN SEMICONDUCTOR MFG39 citations93
US6251744B1Jun 26, 2001

Implant method to improve characteristics of high voltage isolation and high voltage breakdown

TAIWAN SEMICONDUCTOR MFG32 citations93
US6249454B1Jun 19, 2001

Split-gate flash cell for virtual ground architecture

TAIWAN SEMICONDUCTOR MFG23 citations93
US6242308B1Jun 5, 2001

Method of forming poly tip to improve erasing and programming speed split gate flash

TAIWAN SEMICONDUCTOR MFG21 citations93
US6214662B1Apr 10, 2001

Forming self-align source line for memory array

TAIWAN SEMICONDUCTOR MFG27 citations93
US6174772B1Jan 16, 2001

Optimal process flow of fabricating nitride spacer without inter-poly oxide damage in split gate flash

TAIWAN SEMICONDUCTOR MFG16 citations93
US6165845ADec 26, 2000

Method to fabricate poly tip in split-gate flash

TAIWAN SEMICONDUCTOR MFG29 citations93
US6130132AOct 10, 2000

Clean process for manufacturing of split-gate flash memory device having floating gate electrode with sharp peak

TAIWAN SEMICONDUCTOR MFG29 citations93
US6127229AOct 3, 2000

Process of forming an EEPROM device having a split gate

TAIWAN SEMICONDUCTOR MFG36 citations93
US6093608AJul 25, 2000

Source side injection programming and tip erasing P-channel split gate flash memory cell

TAIWAN SEMICONDUCTOR MFG18 citations93
US6005809ADec 21, 1999

Program and erase method for a split gate flash EEPROM

TAIWAN SEMICONDUCTOR MFG33 citations93
US5976927ANov 2, 1999

Two mask method for reducing field oxide encroachment in memory arrays

TAIWAN SEMICONDUCTOR MFG23 citations93
US5858840AJan 12, 1999

Method of forming sharp beak of poly by nitrogen implant to improve erase speed for split-gate flash

TAIWAN SEMICONDUCTOR MFG37 citations93
US5814862ASep 29, 1998

Metallic source line and drain plug with self-aligned contacts for flash memory device

TAIWAN SEMICONDUCTOR MFG33 citations93
US5734607AMar 31, 1998

Method of manufacturing self-aligned bit-line and device manufactured therby

TAIWAN SEMICONDUCTOR MFG43 citations93
US6828183B1Dec 7, 2004

Process for high voltage oxide and select gate poly for split-gate flash memory

TAIWAN SEMICONDUCTOR MFG27 citations92
US6753569B2Jun 22, 2004

Method to fabricate a non-smiling effect structure in split-gate flash with self-aligned isolation

TAIWAN SEMICONDUCTOR MFG18 citations92
US6649489B1Nov 18, 2003

Poly etching solution to improve silicon trench for low STI profile

TAIWAN SEMICONDUCTOR MFG39 citations92
US6538277B2Mar 25, 2003

Split-gate flash cell

TAIWAN SEMICONDUCTOR MFG23 citations92
US6482700B2Nov 19, 2002

Split gate field effect transistor (FET) device with enhanced electrode registration and method for fabrication thereof

TAIWAN SEMICONDUCTOR MFG20 citations92
US6358796B1Mar 19, 2002

Method to fabricate a non-smiling effect structure in split-gate flash with self-aligned isolation

TAIWAN SEMICONDUCTOR MFG46 citations92
US6312989B1Nov 6, 2001

Structure with protruding source in split-gate flash

TAIWAN SEMICONDUCTOR MFG43 citations92
US6309928B1Oct 30, 2001

Split-gate flash cell

TAIWAN SEMICONDUCTOR MFG25 citations92
US6229176B1May 8, 2001

Split gate flash with step poly to improve program speed

TAIWAN SEMICONDUCTOR MFG37 citations92
US6124609ASep 26, 2000

Split gate flash memory with buried source to shrink cell dimension and increase coupling ratio

TAIWAN SEMICONDUCTOR MFG22 citations92
US6090668AJul 18, 2000

Method to fabricate sharp tip of poly in split gate flash

TAIWAN SEMICONDUCTOR MFG34 citations92
US6046086AApr 4, 2000

Method to improve the capacity of data retention and increase the coupling ratio of source to floating gate in split-gate flash

TAIWAN SEMICONDUCTOR MFG35 citations92
US6017795AJan 25, 2000

Method of fabricating buried source to shrink cell dimension and increase coupling ratio in split-gate flash

TAIWAN SEMICONDUCTOR MFG37 citations92
US5970371AOct 19, 1999

Method of forming sharp beak of poly to improve erase speed in split-gate flash EEPROM

TAIWAN SEMICONDUCTOR MFG31 citations92
US5879992AMar 9, 1999

Method of fabricating step poly to improve program speed in split gate flash

TAIWAN SEMICONDUCTOR MFG38 citations92
US5751040AMay 12, 1998

Self-aligned source/drain mask ROM memory cell using trench etched channel

TAIWAN SEMICONDUCTOR MFG26 citations91
US6569736B1May 27, 2003

Method for fabricating square polysilicon spacers for a split gate flash memory device by multi-step polysilicon etch

TAIWAN SEMICONDUCTOR MFG22 citations90
US6259131B1Jul 10, 2001

Poly tip and self aligned source for split-gate flash cell

TAIWAN SEMICONDUCTOR MFG37 citations90
US7667261B2Feb 23, 2010

Split-gate memory cells and fabrication methods thereof

TAIWAN SEMICONDUCTOR MFG9 citations84
US7557402B2Jul 7, 2009

High write and erase efficiency embedded flash cell

TAIWAN SEMICONDUCTOR MFG8 citations84

Showing the top 50 of 100 patents by PatentIndex Score.