Inventor
PARK BYEONGJU
US36 patents
⚠️ This page may combine multiple inventors who share the name “PARK BYEONGJU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
32 patentsUS6555891B1Apr 29, 2003
SOI hybrid structure with selective epitaxial growth of silicon
IBM129 citations99
US6635543B2Oct 21, 2003
SOI hybrid structure with selective epitaxial growth of silicon
IBM79 citations98
US6178660B1Jan 30, 2001
Pass-through semiconductor wafer processing tool and process for gas treating a moving semiconductor wafer
IBM85 citations96
US6180480B1Jan 30, 2001
Germanium or silicon-germanium deep trench fill by melt-flow process
IBM55 citations96
US6268621B1Jul 31, 2001
Vertical channel field effect transistor
IBM71 citations95
US7714326B2May 11, 2010
Electrical antifuse with integrated sensor
IBM47 citations94
US7982285B2Jul 19, 2011
Antifuse structure having an integrated heating element
IBM14 citations93
US7633079B2Dec 15, 2009
Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change material
IBM26 citations93
US6509611B1Jan 21, 2003
Method for wrapped-gate MOSFET
IBM20 citations93
US6403412B1Jun 11, 2002
Method for in-situ formation of bottle shaped trench by gas phase etching
IBM28 citations93
US6359300B1Mar 19, 2002
High aspect ratio deep trench capacitor having void-free fill
IBM37 citations93
US7411818B1Aug 12, 2008
Programmable fuse/non-volatile memory structures using externally heated phase change material
IBM50 citations92
US7254078B1Aug 7, 2007
System and method for increasing reliability of electrical fuse programming
IBM41 citations92
US7432755B1Oct 7, 2008
Programming current stabilized electrical fuse programming circuit and method
IBM20 citations91
US6177696B1Jan 23, 2001
Integration scheme enhancing deep trench capacitance in semiconductor integrated circuit devices
IBM44 citations91
US6488778B1Dec 3, 2002
Apparatus and method for controlling wafer environment between thermal clean and thermal processing
IBM44 citations89
US7880266B2Feb 1, 2011
Four-terminal antifuse structure having integrated heating elements for a programmable circuit
IBM8 citations84
US7732893B2Jun 8, 2010
Electrical fuse structure for higher post-programming resistance
IBM10 citations84
US7723820B2May 25, 2010
Transistor based antifuse with integrated heating element
IBM17 citations84
US7227207B2Jun 5, 2007
Dense semiconductor fuse array
IBM11 citations84
US8361887B2Jan 29, 2013
Method of programming electrical antifuse
IBM7 citations82
US7674691B2Mar 9, 2010
Method of manufacturing an electrical antifuse
IBM10 citations82
US7323761B2Jan 29, 2008
Antifuse structure having an integrated heating element
IBM9 citations79
US7745855B2Jun 29, 2010
Single crystal fuse on air in bulk silicon
IBM7 citations74
US7345904B1Mar 18, 2008
Method for programming an electronically programmable semiconductor fuse
IBM7 citations74
US7081387B2Jul 25, 2006
Damascene gate multi-mesa MOSFET
IBM9 citations74
US6780735B2Aug 24, 2004
Method to increase carbon and boron doping concentrations in Si and SiGe films
IBM7 citations73
US6198167B1Mar 6, 2001
Semiconductor structure exhibiting reduced contact resistance and method for fabrication
IBM11 citations73
US6884672B1Apr 26, 2005
Method for forming an electronic device
IBM11 citations72
US6818952B2Nov 16, 2004
Damascene gate multi-mesa MOSFET
IBM4 citations63
US6429149B1Aug 6, 2002
Low temperature LPCVD PSG/BPSG process
IBM6 citations63
US7713792B2May 11, 2010
Fuse structure including monocrystalline semiconductor material layer and gap
IBM5 citations62