Inventor
KIM KEUN-NAM
KR23 patents
⚠️ This page may combine multiple inventors who share the name “KIM KEUN-NAM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
19 patentsUS7217623B2May 15, 2007
Fin FET and method of fabricating same
SAMSUNG ELECTRONICS CO LTD41 citations96
US7868380B2Jan 11, 2011
Fin FET and method of fabricating same
SAMSUNG ELECTRONICS CO LTD12 citations92
US9177891B2Nov 3, 2015
Semiconductor device including contact pads
SAMSUNG ELECTRONICS CO LTD12 citations84
US11121134B2Sep 14, 2021
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations83
US7494895B2Feb 24, 2009
Method of fabricating a three-dimensional MOSFET employing a hard mask spacer
SAMSUNG ELECTRONICS CO LTD8 citations83
US11594538B2Feb 28, 2023
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations73
US8053833B2Nov 8, 2011
Fin FET and method of fabricating same
SAMSUNG ELECTRONICS CO LTD5 citations73
US11342331B2May 24, 2022
Semiconductor device including an air spacer and a method for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US10910382B2Feb 2, 2021
Method for fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations62
US10886167B2Jan 5, 2021
Semiconductor device for improving device characteristics
SAMSUNG ELECTRONICS CO LTD1 citations62
US7700445B2Apr 20, 2010
Method for fabricating multiple FETs of different types
SAMSUNG ELECTRONICS CO LTD2 citations62
US7667266B2Feb 23, 2010
Semiconductor device including active pattern with channel recess, and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations62
US11468919B2Oct 11, 2022
Semiconductor device including a spacer in contact with an upper surface of a silicide layer
SAMSUNG ELECTRONICS CO LTD0 citations59
US9893190B2Feb 13, 2018
Fin FET and method of fabricating same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9640665B2May 2, 2017
Fin FET and method of fabricating same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9536868B2Jan 3, 2017
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations52
US9196733B2Nov 24, 2015
Fin FET and method of fabricating same
SAMSUNG ELECTRONICS CO LTD0 citations52
US11696436B2Jul 4, 2023
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US12431169B2Sep 30, 2025
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations48