Inventor
JUNG YOUNG-JIN
KR29 patents
⚠️ This page may combine multiple inventors who share the name “JUNG YOUNG-JIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
17 patentsUS10312191B2Jun 4, 2019
Integrated circuit devices including a vertical memory device
SAMSUNG ELECTRONICS CO LTD31 citations94
US10818687B2Oct 27, 2020
Three-dimensional semiconductor memory device with vertical structures penetrating a dummy insulating pattern in a connection region
SAMSUNG ELECTRONICS CO LTD12 citations85
US10553598B2Feb 4, 2020
Three-dimensional semiconductor devices including vertical structures
SAMSUNG ELECTRONICS CO LTD7 citations83
US10811356B2Oct 20, 2020
Integrated circuit devices including a vertical memory device
SAMSUNG ELECTRONICS CO LTD2 citations73
US10468433B2Nov 5, 2019
Three-dimensional semiconductor devices including gate electrodes
SAMSUNG ELECTRONICS CO LTD6 citations73
US11626420B2Apr 11, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations72
US10923489B2Feb 16, 2021
Three-dimensional semiconductor devices including vertical structures
SAMSUNG ELECTRONICS CO LTD2 citations72
US10950619B2Mar 16, 2021
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD4 citations68
US11864382B2Jan 2, 2024
Three-dimensional semiconductor memory device with vertical channels in a connection region having a lower channel pattern contacting the substrate
SAMSUNG ELECTRONICS CO LTD0 citations62
US11411024B2Aug 9, 2022
Vertical type semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US10957708B2Mar 23, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations62
US10770473B2Sep 8, 2020
Vertical type semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US12127408B2Oct 22, 2024
Nonvolatile memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11683934B2Jun 20, 2023
Nonvolatile memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11081499B2Aug 3, 2021
Nonvolatile memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US10586766B2Mar 10, 2020
Integrated circuit devices including a vertical memory device
SAMSUNG ELECTRONICS CO LTD0 citations52
US11133327B2Sep 28, 2021
Three-dimensional semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations43
POSCO
7 patentsUS12221682B2Feb 11, 2025
Ultrahigh-strength steel having excellent cold workability and SSC resistance, and manufacturing method therefor
POSCO0 citations52
US11155906B2Oct 26, 2021
Pressure vessel steel having excellent hydrogen induced cracking resistance, and manufacturing method therefor
POSCO0 citations50
US11473178B2Oct 18, 2022
Wear-resistant steel having excellent hardness and impact toughness, and method for producing same
POSCO0 citations49
US11371125B2Jun 28, 2022
Wear-resistant steel having excellent hardness and impact toughness, and method for producing same
POSCO0 citations49
US12188109B2Jan 7, 2025
Steel material for brake disc of motor vehicle having excellent wear resistance and high temperature strength and method of manufacturing the same
POSCO0 citations48
US11401572B2Aug 2, 2022
High-hardness wear-resistant steel and method for manufacturing same
POSCO0 citations44
US11332802B2May 17, 2022
High-hardness wear-resistant steel and method for manufacturing same
POSCO0 citations44