Inventor
YEH WEN-KUAN
TW47 patents
⚠️ This page may combine multiple inventors who share the name “YEH WEN-KUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
36 patentsUS6319807B1Nov 20, 2001
Method for forming a semiconductor device by using reverse-offset spacer process
UNITED MICROELECTRONICS CORP95 citations98
US6294834B1Sep 25, 2001
Structure of combined passive elements and logic circuit on a silicon on insulator wafer
UNITED MICROELECTRONICS CORP117 citations98
US6064107AMay 16, 2000
Gate structure of a semiconductor device having an air gap
UNITED MICROELECTRONICS CORP88 citations98
US5946598AAug 31, 1999
Process of fabricating metal gate electrode
UNITED MICROELECTRONICS CORP69 citations96
US6177336B1Jan 23, 2001
Method for fabricating a metal-oxide semiconductor device
UNITED MICROELECTRONICS CORP40 citations93
US6153483ANov 28, 2000
Method for manufacturing MOS device
UNITED MICROELECTRONICS CORP24 citations93
US6153478ANov 28, 2000
STI process for eliminating kink effect
UNITED MICROELECTRONICS CORP46 citations93
US6114233ASep 5, 2000
Dual damascene process using low-dielectric constant materials
UNITED MICROELECTRONICS CORP28 citations93
US6100569AAug 8, 2000
Semiconductor device with shared contact
UNITED MICROELECTRONICS CORP20 citations93
US6083827AJul 4, 2000
Method for fabricating local interconnect
UNITED MICROELECTRONICS CORP22 citations93
US6048771AApr 11, 2000
Shallow trench isolation technique
UNITED MICROELECTRONICS CORP41 citations93
US6015746AJan 18, 2000
Method of fabricating semiconductor device with a gate-side air-gap structure
UNITED MICROELECTRONICS CORP30 citations93
US6008118ADec 28, 1999
Method of fabricating a barrier layer
UNITED MICROELECTRONICS CORP25 citations93
US6008100ADec 28, 1999
Metal-oxide semiconductor field effect transistor device fabrication process
UNITED MICROELECTRONICS CORP27 citations93
US5770508AJun 23, 1998
Method of forming lightly doped drains in metalic oxide semiconductor components
UNITED MICROELECTRONICS CORP39 citations93
US6323073B1Nov 27, 2001
Method for forming doped regions on an SOI device
UNITED MICROELECTRONICS CORP22 citations92
US6083783AJul 4, 2000
Method of manufacturing complementary metallic-oxide-semiconductor
UNITED MICROELECTRONICS CORP24 citations92
US6004852ADec 21, 1999
Manufacture of MOSFET having LDD source/drain region
UNITED MICROELECTRONICS CORP37 citations92
US6365468B1Apr 2, 2002
Method for forming doped p-type gate with anti-reflection layer
UNITED MICROELECTRONICS CORP16 citations84
US6306701B1Oct 23, 2001
Self-aligned contact process
UNITED MICROELECTRONICS CORP18 citations84
US6451675B1Sep 17, 2002
Semiconductor device having varied dopant density regions
UNITED MICROELECTRONICS CORP10 citations74
US6281134B1Aug 28, 2001
Method for combining logic circuit and capacitor
UNITED MICROELECTRONICS CORP9 citations74
US6274448B1Aug 14, 2001
Method of suppressing junction capacitance of source/drain regions
UNITED MICROELECTRONICS CORP10 citations74
US6211023B1Apr 3, 2001
Method for fabricating a metal-oxide semiconductor transistor
UNITED MICROELECTRONICS CORP12 citations74
US6197642B1Mar 6, 2001
Method for manufacturing gate terminal
UNITED MICROELECTRONICS CORP8 citations74
US6117743ASep 12, 2000
Method of manufacturing MOS device using anti reflective coating
UNITED MICROELECTRONICS CORP13 citations74
US6057189AMay 2, 2000
Method of fabricating capacitor utilizing an ion implantation method
UNITED MICROELECTRONICS CORP9 citations74
US6022785AFeb 8, 2000
Method of fabricating a metal-oxide-semiconductor transistor
UNITED MICROELECTRONICS CORP12 citations74
US5920782AJul 6, 1999
Method for improving hot carrier degradation
UNITED MICROELECTRONICS CORP16 citations74
US6509218B2Jan 21, 2003
Front stage process of a fully depleted silicon-on-insulator device
UNITED MICROELECTRONICS CORP7 citations73
US6476448B2Nov 5, 2002
Front stage process of a fully depleted silicon-on-insulator device and a structure thereof
UNITED MICROELECTRONICS CORP8 citations73
US6376882B1Apr 23, 2002
Electrostatic discharge protection apparatus with silicon control rectifier and the method of fabricating the same
UNITED MICROELECTRONICS CORP5 citations73
US6455913B2Sep 24, 2002
Copper fuse for integrated circuit
UNITED MICROELECTRONICS CORP5 citations63
US6277699B1Aug 21, 2001
Method for forming a metal-oxide-semiconductor transistor
UNITED MICROELECTRONICS CORP6 citations63
US6200870B1Mar 13, 2001
Method for forming gate
UNITED MICROELECTRONICS CORP5 citations63
US6548360B2Apr 15, 2003
Electrostatic discharge protection apparatus with silicon control rectifier and the method of fabricating the same
UNITED MICROELECTRONICS CORP4 citations62
NAT APPLIED RES LABORATORIES
6 patentsUS10134735B2Nov 20, 2018
Heterogeneously integrated semiconductor device and manufacturing method thereof
NAT APPLIED RES LABORATORIES3 citations71
US10446694B2Oct 15, 2019
Field-effect transistor structure having two-dimensional transition metal dichalcogenide
NAT APPLIED RES LABORATORIES2 citations70
US11515307B2Nov 29, 2022
Heterogeneously integrated semiconductor device and manufacturing method thereof
NAT APPLIED RES LABORATORIES0 citations61
US10217500B1Feb 26, 2019
Inductive spin-orbit torque device and method for fabricating the same
NAT APPLIED RES LABORATORIES1 citations56
US10180509B2Jan 15, 2019
Environment monitoring system and vibration sensing device
NAT APPLIED RES LABORATORIES1 citations55
US10727231B2Jul 28, 2020
Heterogeneously integrated semiconductor device and manufacturing method thereof
NAT APPLIED RES LABORATORIES0 citations51