P

Inventor

YEH WEN-KUAN

TW47 patents
⚠️ This page may combine multiple inventors who share the name “YEH WEN-KUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UNITED MICROELECTRONICS CORP

36 patents
US6319807B1Nov 20, 2001

Method for forming a semiconductor device by using reverse-offset spacer process

UNITED MICROELECTRONICS CORP95 citations98
US6294834B1Sep 25, 2001

Structure of combined passive elements and logic circuit on a silicon on insulator wafer

UNITED MICROELECTRONICS CORP117 citations98
US6064107AMay 16, 2000

Gate structure of a semiconductor device having an air gap

UNITED MICROELECTRONICS CORP88 citations98
US5946598AAug 31, 1999

Process of fabricating metal gate electrode

UNITED MICROELECTRONICS CORP69 citations96
US6177336B1Jan 23, 2001

Method for fabricating a metal-oxide semiconductor device

UNITED MICROELECTRONICS CORP40 citations93
US6153483ANov 28, 2000

Method for manufacturing MOS device

UNITED MICROELECTRONICS CORP24 citations93
US6153478ANov 28, 2000

STI process for eliminating kink effect

UNITED MICROELECTRONICS CORP46 citations93
US6114233ASep 5, 2000

Dual damascene process using low-dielectric constant materials

UNITED MICROELECTRONICS CORP28 citations93
US6100569AAug 8, 2000

Semiconductor device with shared contact

UNITED MICROELECTRONICS CORP20 citations93
US6083827AJul 4, 2000

Method for fabricating local interconnect

UNITED MICROELECTRONICS CORP22 citations93
US6048771AApr 11, 2000

Shallow trench isolation technique

UNITED MICROELECTRONICS CORP41 citations93
US6015746AJan 18, 2000

Method of fabricating semiconductor device with a gate-side air-gap structure

UNITED MICROELECTRONICS CORP30 citations93
US6008118ADec 28, 1999

Method of fabricating a barrier layer

UNITED MICROELECTRONICS CORP25 citations93
US6008100ADec 28, 1999

Metal-oxide semiconductor field effect transistor device fabrication process

UNITED MICROELECTRONICS CORP27 citations93
US5770508AJun 23, 1998

Method of forming lightly doped drains in metalic oxide semiconductor components

UNITED MICROELECTRONICS CORP39 citations93
US6323073B1Nov 27, 2001

Method for forming doped regions on an SOI device

UNITED MICROELECTRONICS CORP22 citations92
US6083783AJul 4, 2000

Method of manufacturing complementary metallic-oxide-semiconductor

UNITED MICROELECTRONICS CORP24 citations92
US6004852ADec 21, 1999

Manufacture of MOSFET having LDD source/drain region

UNITED MICROELECTRONICS CORP37 citations92
US6365468B1Apr 2, 2002

Method for forming doped p-type gate with anti-reflection layer

UNITED MICROELECTRONICS CORP16 citations84
US6306701B1Oct 23, 2001

Self-aligned contact process

UNITED MICROELECTRONICS CORP18 citations84
US6451675B1Sep 17, 2002

Semiconductor device having varied dopant density regions

UNITED MICROELECTRONICS CORP10 citations74
US6281134B1Aug 28, 2001

Method for combining logic circuit and capacitor

UNITED MICROELECTRONICS CORP9 citations74
US6274448B1Aug 14, 2001

Method of suppressing junction capacitance of source/drain regions

UNITED MICROELECTRONICS CORP10 citations74
US6211023B1Apr 3, 2001

Method for fabricating a metal-oxide semiconductor transistor

UNITED MICROELECTRONICS CORP12 citations74
US6197642B1Mar 6, 2001

Method for manufacturing gate terminal

UNITED MICROELECTRONICS CORP8 citations74
US6117743ASep 12, 2000

Method of manufacturing MOS device using anti reflective coating

UNITED MICROELECTRONICS CORP13 citations74
US6057189AMay 2, 2000

Method of fabricating capacitor utilizing an ion implantation method

UNITED MICROELECTRONICS CORP9 citations74
US6022785AFeb 8, 2000

Method of fabricating a metal-oxide-semiconductor transistor

UNITED MICROELECTRONICS CORP12 citations74
US5920782AJul 6, 1999

Method for improving hot carrier degradation

UNITED MICROELECTRONICS CORP16 citations74
US6509218B2Jan 21, 2003

Front stage process of a fully depleted silicon-on-insulator device

UNITED MICROELECTRONICS CORP7 citations73
US6476448B2Nov 5, 2002

Front stage process of a fully depleted silicon-on-insulator device and a structure thereof

UNITED MICROELECTRONICS CORP8 citations73
US6376882B1Apr 23, 2002

Electrostatic discharge protection apparatus with silicon control rectifier and the method of fabricating the same

UNITED MICROELECTRONICS CORP5 citations73
US6455913B2Sep 24, 2002

Copper fuse for integrated circuit

UNITED MICROELECTRONICS CORP5 citations63
US6277699B1Aug 21, 2001

Method for forming a metal-oxide-semiconductor transistor

UNITED MICROELECTRONICS CORP6 citations63
US6200870B1Mar 13, 2001

Method for forming gate

UNITED MICROELECTRONICS CORP5 citations63
US6548360B2Apr 15, 2003

Electrostatic discharge protection apparatus with silicon control rectifier and the method of fabricating the same

UNITED MICROELECTRONICS CORP4 citations62

NAT APPLIED RES LABORATORIES

6 patents

(unassigned)

1 patent

UNITED MICOELECTRONICS CORP

1 patent

UNITED MIROELECTRONICS CORP

1 patent

UNITED MICROELECTRICS CORP

1 patent

NAT SCIENCE COUNCIL

1 patent