Inventor
SHIMIZU ATSUO
JP21 patents
⚠️ This page may combine multiple inventors who share the name “SHIMIZU ATSUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIYO YUDEN KK
8 patentsUS6208601B1Mar 27, 2001
Optical information recording method and apparatus
TAIYO YUDEN KK19 citations92
US6813232B1Nov 2, 2004
Optical information recording/reproducing method and device therefor
TAIYO YUDEN KK15 citations82
US6874156B2Mar 29, 2005
Optical information recording medium
TAIYO YUDEN KK2 citations60
US6990049B2Jan 24, 2006
Optical information recording medium, method for recording/reproducing the same, and optical pickup
TAIYO YUDEN KK0 citations50
US6792613B2Sep 14, 2004
Optical information recording medium
TAIYO YUDEN KK0 citations50
US8018822B2Sep 13, 2011
Optical information recording medium
TAIYO YUDEN KK1 citations49
US7936661B2May 3, 2011
Optical information recording medium
TAIYO YUDEN KK0 citations39
US7903535B2Mar 8, 2011
Optical information recording medium and manufacturing method of the same
TAIYO YUDEN KK0 citations37
NIPPON STEEL CORP
4 patentsUS12442085B2Oct 14, 2025
Surface-treated steel sheet
NIPPON STEEL CORP0 citations61
US12559830B2Feb 24, 2026
Surface-treated steel
NIPPON STEEL CORP0 citations59
US12509777B2Dec 30, 2025
Surface-treated steel sheet
NIPPON STEEL CORP0 citations50
US12331408B2Jun 17, 2025
Surface-treated steel sheet
NIPPON STEEL CORP0 citations48
NISSHIN STEEL CO LTD
3 patentsUS10202676B2Feb 12, 2019
Method for producing hot-dip Zn alloy-plated steel sheet
NISSHIN STEEL CO LTD0 citations51
US10167542B2Jan 1, 2019
Method for producing hot-dip Zn alloy-plated steel sheet
NISSHIN STEEL CO LTD0 citations51
US10125414B2Nov 13, 2018
Method of producing hot-dip Zn alloy-plated steel sheet
NISSHIN STEEL CO LTD0 citations41
FUJITSU LTD
2 patentsUS6949830B2Sep 27, 2005
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
FUJITSU LTD45 citations95
US7485570B2Feb 3, 2009
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
FUJITSU LTD8 citations83
FUJITSU SEMICONDUCTOR LTD
2 patentsUS8778814B2Jul 15, 2014
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
FUJITSU SEMICONDUCTOR LTD20 citations92
US8349722B2Jan 8, 2013
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
FUJITSU SEMICONDUCTOR LTD6 citations83