Inventor
HAMASAKI TOSHIHIKO
JP17 patents
⚠️ This page may combine multiple inventors who share the name “HAMASAKI TOSHIHIKO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
6 patentsUS4996581AFeb 26, 1991
Bipolar transistor
TOSHIBA KK64 citations96
US5083033AJan 21, 1992
Method of depositing an insulating film and a focusing ion beam apparatus
TOSHIBA KK80 citations95
US5250448AOct 5, 1993
Method of fabricating a miniaturized heterojunction bipolar transistor
TOSHIBA KK47 citations92
US4830972AMay 16, 1989
Method of manufacturing bipolar transistor
TOSHIBA KK31 citations92
US5175603ADec 29, 1992
Bipolar transistor
TOSHIBA KK9 citations73
US5094964AMar 10, 1992
Method for manufacturing a bipolar semiconductor device
TOSHIBA KK3 citations62
BURR BROWN CORP
6 patentsUS5694065ADec 2, 1997
Switching control circuitry for low noise CMOS inverter
BURR BROWN CORP143 citations95
US5977895ANov 2, 1999
Waveform shaping circuit for function circuit and high order delta sigma modulator
BURR BROWN CORP29 citations92
US5682162AOct 28, 1997
Oversampling digital-to-analog converter with auto-muting feature
BURR BROWN CORP22 citations92
US5856799AJan 5, 1999
Rotation system for correction of weighting element errors in digital-to-analog converter
BURR BROWN CORP40 citations90
US5815051ASep 29, 1998
Differential filter circuit and integrated circuit structure therefor
BURR BROWN CORP49 citations89
US5905427AMay 18, 1999
Integrated circuit resistor array
BURR BROWN CORP14 citations68
TEXAS INSTRUMENTS INC
2 patentsUS6489909B2Dec 3, 2002
Method and apparatus for improving S/N ratio in digital-to-analog conversion of pulse density modulated (PDM) signal
TEXAS INSTRUMENTS INC23 citations91
US6469648B2Oct 22, 2002
Digital-to analog-converting method and digital-to analog converter employing common weight generating elements
TEXAS INSTRUMENTS INC13 citations72
AGENCY IND SCIENCE TECHN
2 patentsUS4662949AMay 5, 1987
Method of forming a single crystal semiconductor layer from a non-single crystalline material by a shaped energy beam
AGENCY IND SCIENCE TECHN17 citations80
US4746803AMay 24, 1988
Method of forming a single crystal semiconductor layer from a non-single-crystalline material and apparatus for forming the same
AGENCY IND SCIENCE TECHN2 citations60